Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

Amir, Walid; Shin, Ju‐Won; Shin, Ki‐Yong; Chakraborty, Surajit; Cho, Chu‐Young; Kim, Jae‐Moo; Lee, Sang‐Tae; Hoshi, Takayuki; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hiroyuki; Kim, Dae-Hyun; Kim, Tae-Woo

doi:10.1109/ted.2023.3268626

Cited by 11 publications

(13 citation statements)

References 27 publications

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“…To validate the presence of the fast transient charging effect in the two types of devices, we utilized the pulsed I–V measurement and single-pulse I D – V G techniques. These measurements were conducted using a semiconductor parameter analyzer in conjunction with the waveform generator module [ 27 , 28 , 29 , 30 , 31 , 32 ]. During the pulsed I–V measurements, a single short pulse was applied to the gate and drain, and the resulting I D was measured.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Shin,

Amir

et al. 2023

Materials

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Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. While an MHEMT exhibited elevated off-state current levels, its direct current (DC) and radio frequency (RF) traits were found to be comparable to those of InP-based lattice-matched high-electron-mobility transistors (LM-HEMTs). However, the Pulsed I–V measurement results confirmed the presence of the fast transient charging effect, leading to a more substantial degradation in drain current observed in MHEMT. In addition, through the low-frequency noise characteristics, it was confirmed that the dominant trapping location was located in the bulk site. The slope of the 1/f noise measurement indicated that the primary trapping site was in proximity to the bulk traps. The carrier-number-fluctuation (CNF) model was employed to extract the bulk trap density (Nt). For the LM-HEMTs, the value was at 3.27 × 1016 eV−1·cm−3, while for the MHEMT, it was 3.56 × 1017 eV−1·cm−3.

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Section: Resultsmentioning

confidence: 99%

“…To gain insights into the primary locations of the trapping phenomena resulting from the defect site in response to the fluctuation of the channel carriers, 1/ f noise measurements were conducted [ 32 ]. This is an effective measurement method for analyzing interfaces that can cause device performance degradation.…”

Section: Resultsmentioning

confidence: 99%

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Shin,

Amir

et al. 2023

Materials

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“…The power-law equation (1/ f ℽ function) is used to explain the frequency dependency of power spectral density (PSD) [ 18 ]. The 1/ f ℽ function was fitted with the measured data over the frequency range of 1 Hz to 10 kHz to extract the value of the frequency component (ℽ) [ 19 ]. Based on Table 1 , the value of ℽ is in the range of 1–1.3 (near 1), indicating that the defects/traps had uniform depth and energy [ 32 ].…”

Section: Resultsmentioning

confidence: 99%

“…The defect sites in the AlGaN barrier layer and the interface Al x Ga 1−x N/GaN are the predominant cause of the transient-charging effects ( Figure 1 ) [ 18 , 19 ]. The transient-charging effects follow two different processes, fast and slow transient charging.…”

Section: Introductionmentioning

confidence: 99%

Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions

et al. 2023

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In this study, we present a detailed analysis of trapping characteristics at the AlxGa1−xN/GaN interface of AlxGa1−xN/GaN high-electron-mobility transistors (HEMTs) with reliability assessments, demonstrating how the composition of the Al in the AlxGa1−xN barrier impacts the performance of the device. Reliability instability assessment in two different AlxGa1−xN/GaN HEMTs [x = 0.25, 0.45] using a single-pulse ID–VD characterization technique revealed higher drain-current degradation (∆ID) with pulse time for Al0.45Ga0.55N/GaN devices which correlates to the fast-transient charge-trapping in the defect sites near the interface of AlxGa1−xN/GaN. Constant voltage stress (CVS) measurement was used to analyze the charge-trapping phenomena of the channel carriers for long-term reliability testing. Al0.45Ga0.55N/GaN devices exhibited higher-threshold voltage shifting (∆VT) caused by stress electric fields, verifying the interfacial deterioration phenomenon. Defect sites near the interface of the AlGaN barrier responded to the stress electric fields and captured channel electrons—resulting in these charging effects that could be partially reversed using recovery voltages. The quantitative extraction of volume trap density (Nt) using 1/f low-frequency noise characterizations unveiled a 40% reduced Nt for the Al0.25Ga0.75N/GaN device, further verifying the higher trapping phenomena in the Al0.45Ga0.55N barrier caused by the rougher Al0.45Ga0.55N/GaN interface.

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“…The important characteristics of AlGaN/GaN HEMTs are high sheet carrier density (n s >> 1 × 10 13 cm −2 ) that produces high I max , mobility of electron is high (µ > 1500 cm 2 /V s ) which suitable for low on-resistance (R on ), high breakdown voltage and high operating channel temperature [9][10][11]. Several groups have investigated the high-performance DC analysis of AlGaN/GaN HEMTs [12,13].…”

Section: Introductionmentioning

confidence: 99%

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

et al. 2023

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This paper presents a novel approach to the efficient extraction of parasitic resistances in high electron mobility transistors (HEMTs). The study reveals that the gate resistance value can be accurately determined under specific forward gate bias conditions (Vg = 1.0 V), although the gate resistance value becomes unreliable beyond this threshold (Vg > 1.0 V) due to potential damage to the Schottky contact. Furthermore, by examining the characteristics of the device under a cold-FET bias condition (Vds = 0 V), a linear correlation between the gate and drain current is identified, enabling an estimation of the interdependence between the drain and source resistance using the proposed method. The estimation of parasitic pad capacitance (Cpg and Cpd) from Dambrine’s model is refined by incorporating the depletion layer capacitance on the gate side during the pinch-off condition. To validate the accuracy of the extracted parasitic capacitance and resistance values obtained from the new method, small-signal modeling is performed on a diverse range of measured devices.

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Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

Cited by 11 publications

References 27 publications

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

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