Performance enhancement by sol-gel processed Ni-doped ZnO layer in InP-based quantum dot light-emitting diodes

Mude, Nagarjuna Naik; Yang, Hye In; Thuy, Truong Thi; Kwon, Jang Hyuk

doi:10.1016/j.orgel.2022.106696

Cited by 5 publications

(1 citation statement)

References 36 publications

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“…The study showed that the conduction band of Mg-doped ZnO shifted towards a position that better matched the InP QDs, effectively enhancing the performance of QLEDs, as shown in Figure 7. Mude et al [104] used Ni-doped ZnO as the electron transport layer and introduced a ZnS interlayer at the ETL/QD interface to prepare a high-performance InP-based inverted red Cd-free QLED device, with a maximum EQE of 10.6%. By utilizing Ni doping, the conductivity and minimum conduction band of ZnO can be adjusted, which helps to enhance the charge balance in QLED devices.…”

Section: Electron Transport Layermentioning

confidence: 99%

Research Progress of Heavy-Metal-Free Quantum Dot Light-Emitting Diodes

Xu,

Lai,

Zhang

et al. 2024

Nanomaterials

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At present, heavy-metal-free quantum dot light-emitting diodes (QLEDs) have shown great potential as a research hotspot in the field of optoelectronic devices. This article reviews the research on heavy-metal-free quantum dot (QD) materials and light-emitting diode (LED) devices. In the first section, we discussed the hazards of heavy-metal-containing quantum dots (QDs), such as environmental pollution and human health risks. Next, the main representatives of heavy-metal-free QDs were introduced, such as InP, ZnE (E=S, Se and Te), CuInS2, Ag2S, and so on. In the next section, we discussed the synthesis methods of heavy-metal-free QDs, including the hot injection (HI) method, the heat up (HU) method, the cation exchange (CE) method, the successful ionic layer adsorption and reaction (SILAR) method, and so on. Finally, important progress in the development of heavy-metal-free QLEDs was summarized in three aspects (QD emitter layer, hole transport layer, and electron transport layer).

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Section: Electron Transport Layermentioning

confidence: 99%