Performance-enhanced NiO/β-Ga2O3 heterojunction diodes fabricated on an etched β-Ga2O3 surface

Lü, Xing; Xu, Tongling; Deng, Yuxin; Liao, Chao; Luo, Haoxun; Pei, Yanli; Chen, Zimin; Lv, Yuanjie; Wang, Gang

doi:10.1016/j.apsusc.2022.153587

Cited by 14 publications

(3 citation statements)

References 24 publications

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“…However, the measured BV of the JBSs did not show a strong dependence on the fin width. Though the reverse leakage current was partially suppressed by using the fin structures, the dry etching process produced high-density deep-level traps at the β-Ga 2 O 3 surface, which might introduce excess leakage current [74,75] . A post-etching treatment process would be helpful to remove the defects from the etched β-Ga 2 O 3 surface, for example, surface treatment using a hot tetramethylammonium hydroxide (TMAH) solution [76] .…”

Section: Nio/β-ga 2 O 3 Heterojunction Jbsmentioning

confidence: 99%

Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics

Lü¹,

Deng²,

Pei³

et al. 2023

J. Semicond.

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Beta gallium oxide (β-Ga2O3) has attracted significant attention for applications in power electronics due to its ultra-wide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga’s figures of merit (BFOM) of more than 3000. Though β-Ga2O3 possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga2O3-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide (NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga2O3 heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga2O3 heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga2O3 heterojunctions are discussed. Various device architectures, including the NiO/β-Ga2O3 heterojunction pn diodes (HJDs), junction barrier Schottky (JBS) diodes, and junction field effect transistors (JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga2O3 heterojunction, are described.

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Section: Nio/β-ga 2 O 3 Heterojunction Jbsmentioning

confidence: 99%

Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics

Lü¹,

Deng²,

Pei³

et al. 2023

J. Semicond.

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“…Various approaches have been investigated recently in order to remove plasma etch damages in Ga 2 O 3 -based devices such as thermal treatments 22,23) or wet chemical treatments in H 3 PO 4 , TMAH or HF. [24][25][26] We believe that such treatments will lead to a significant reduction of the transfer curve hysteresis as well as enhancement of the on/off current ratio. Another explanation for the poor performance of the device could be also related to increased ohmic contact resistances.…”

Section: Resultsmentioning

confidence: 96%

Enhancement-mode vertical (100) β-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV cm⁻¹

Tetzner

Klupsch

Popp

et al. 2023

Jpn. J. Appl. Phys.

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In this work, we report on the realization of vertical (100) β-Ga2O3 FinFET devices for the use in power electronics applications. The experiments are carried out on epitaxial (100) β-Ga2O3 wafers consisting of a conductive substrate with a doping concentration ND of 3×1018 cm-3 and an epitaxially grown layer with ND of 5×1016 cm-3 for the drift and channel region. The fabricated FinFET devices feature enhancement-mode properties with a threshold voltage of +2 V and on/off-current ratio of 105. Moreover, breakdown measurements of these devices reveal an average breakdown strength of 2.7 MV/cm. Additional device simulation indicates the presence of electric field peaks near the gate edge outside the active device as high as 7 MV/cm and 5 MV/cm in the Al2O3 gate oxide and β-Ga2O3 semiconductor, respectively.

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“…There are no reports on the influence of alkaline solution treatment to the Al 2 O 3 /β-Ga 2 O 3 MOSCAPs. In general, alkaline treatment such as TMAH has been widely used to reduce dry etch-induced surface damage of β-Ga 2 O 3 after the inductively coupled plasma-reactive ion etching process [35,36]. Alkaline treatment may provide different surface states and we firstly investigated the pretreatment on β-Ga 2 O 3 MOS structure.…”

Section: Introductionmentioning

confidence: 99%

Impact of NaOH solution surface treatment on Al₂O₃/β-Ga₂O₃ MOS capacitors

Fang,

Liao,

et al. 2024

Semicond. Sci. Technol.

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A suitable semiconductor surface treatment could improve the gate dielectric quality and reduce the interface states and traps to enhance the performance of metal–oxide semiconductor capacitors (MOSCAPs). In this paper, β-Ga2O3 surface treatment using NaOH solution prior to atomic layer deposition of Al2O3 was investigated. In comparison with piranha pretreatment, MOSCAPs with NaOH solution surface pretreatment show a larger maximum accumulation capacitance with less frequency dispersion, reduced charges/traps and interface state density D it. The improvement in MOSCAPs performance could be attributed to the NaOH solution pretreatment induced slight surface etching effect and relatively effective hydroxylation surface. These results suggest that the process optimization of NaOH solution surface pretreatment could lead to further improvement of β-Ga2O3 MOSCAPs and have a potential in application of β-Ga2O3 metal–oxide semiconductor field-effect transistors in the future.

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Performance-enhanced NiO/β-Ga2O3 heterojunction diodes fabricated on an etched β-Ga2O3 surface

Cited by 14 publications

References 24 publications

Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics

Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics

Enhancement-mode vertical (100) β-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV cm⁻¹

Impact of NaOH solution surface treatment on Al₂O₃/β-Ga₂O₃ MOS capacitors

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Performance-enhanced NiO/β-Ga2O3 heterojunction diodes fabricated on an etched β-Ga2O3 surface

Cited by 14 publications

References 24 publications

Recent advances in NiO/Ga2O3 heterojunctions for power electronics

Recent advances in NiO/Ga2O3 heterojunctions for power electronics

Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors

Contact Info

Product

Resources

About

Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics

Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics

Enhancement-mode vertical (100) β-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV cm⁻¹

Impact of NaOH solution surface treatment on Al₂O₃/β-Ga₂O₃ MOS capacitors