Performance Comparison of Top- and Bottom-emitting Long Wave Infrared Light Emitting Diode Devices

Das, Nirmalya Sankar

doi:10.1007/s11664-009-0905-1

Cited by 7 publications

(3 citation statements)

References 16 publications

(8 reference statements)

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“…speckle-free) IR light. Thermal sources such as glo-bars are currently dominant, but highbrightness mid-IR LEDs would offer benefits including higher speed and greater tunability of the output spectrum [141][142][143]. In a recent paper, Ricker et al took advantage of the wide energy tunability of InAs/GaSb SLs on GaSb substrates to demonstrate an LED with an apparent temperature of 1000 K in the 3-5 μm range [127].…”

Section: Type-ii Superlattice-based Mid-ir Emitters On Inas and Gasb ...mentioning

confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

141

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The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum-and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential midinfrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in midinfrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transitionmetal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim to provide a survey of the current state of the art for mid-IR sources, but instead looks primarily to provide a picture of potential next-generation optical and optoelectronic materials systems for mid-IR light generation.

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Section: Type-ii Superlattice-based Mid-ir Emitters On Inas and Gasb ...mentioning

confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

141

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“…Around 2010, several research groups have investigated LED systems based on InAs/Ga(In)Sb. Das [ 78 ] and Koerperick et al [ 79 ] showed similar peak wavelengths of ~ 8 µm for an InAs/GaInSb/InAs multi quantum well (MQW) LED and a superlattice (SL) InAs/GaSb LED, respectively. Shortly after the publication mentioned above, Das published another paper [ 80 ] showing how varying the indium fraction (18–30%) of the InAs/Ga 1-x In x Sb/InAs structure with decreasing fraction leads to an increase of the emission intensity.…”

Section: Advancements In Mir Light Sources Beyond Lasersmentioning

confidence: 96%

Advanced mid-infrared lightsources above and beyond lasers and their analytical utility

Hlavatsch

Mizaikoff

2022

ANAL. SCI.

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In the mid-infrared (MIR) spectral range, a series of applications have successfully been shown in the fields of sensing, security and defense, energy conservation, and communications. In particular, rapid and recent developments in MIR light sources have significantly increased the interest in developing MIR optical systems, sensors, and diagnostics especially for chem/bio detection schemes and molecular analytical application scenarios. In addition to the advancements in optoelectronic light sources, and especially quantum and interband cascade lasers (QCLs, ICLs) largely driving the increasing interest in the MIR regime, also thermal emitters and light emitting diodes (LEDs) offer opportunities to alternatively fill current gaps in spectral coverage specifically with analytical applications and chem/bio sensing/diagnostics in the focus. As MIR laser technology has been broadly covered in a variety of articles, the present review aims at summarizing recent developments in MIR non-laser light sources highlighting their analytical utility in the MIR wavelength range. Graphical abstract

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“…Currently, LED displays have two approaches based on the type of emission: top-emitting LEDs, emitting vertically upwards from the substrate [4] and bottom-emitting LEDs, emitting toward the substrate [5,6]. Because of the low aperture ratio caused by the electronic circuit configuration, conventional bottom-emitting LEDs typically have lower light emission efficiency than top-emitting LEDs [7,8]. Top-emitting LEDs, on the other hand, do not care about the electronic circuit configuration-dependent aperture ratio because they use the microcavity effect for smaller pixel display applications [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Sub-Micron Monolithic Full-Color Nanorod LEDs on A Single Substrate

Kim

et al. 2023

IEEE Photonics J.

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The extended reality (XR) display, including augmented reality (AR) and virtual reality (VR), requires ultrahigh-resolution and high-luminance pixel technology. GaNbased micro-LEDs are the most promising for high-density pixel applications. However, it is necessary to simultaneously fabricate full-color R/G/B emitters on a single substrate. Moreover, the efficiency droop at long wavelengths with high-indium InGaN still remains a challenge. The InGaN nanorod has the potential to realize monolithic R/G/B LEDs on a single substrate, and the Al reflector has a light reflectance that can dramatically improve light extraction efficiency. Here, we designed sub-micron monolithic full-color R/G/B nanorod LEDs with an Al core-shell reflector on single chip. The optimal structures for light confinement and vertical light extraction by single InGaN nanorod R/G/B LED structures were identified. The single nanorod with Al core-shell structure dramatically increased the light extraction efficiency, and showed an improvement of more than 20%, especially in the red wavelength. As a result, by introducing a longlength nanorod structure, we have successfully designed a new submicron pixel with full-color R/G/B LEDs operating within 1 x 1 μm2 size. This unique design will be a key factor in enabling the next generation of AR and VR displays that require ultra-small and compact pixels.

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Performance Comparison of Top- and Bottom-emitting Long Wave Infrared Light Emitting Diode Devices

Cited by 7 publications

References 16 publications

Next-generation mid-infrared sources

Next-generation mid-infrared sources

Advanced mid-infrared lightsources above and beyond lasers and their analytical utility

Sub-Micron Monolithic Full-Color Nanorod LEDs on A Single Substrate

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