Performance Comparison of the Auxiliary Resonant Commutated Pole Inverter (ARCPI) using SiC MOSFETs or Si IGBTs

Zhou, Wenzhi; Yuan, Xibo; Laird, Ian

doi:10.1109/ecce.2019.8912876

Cited by 14 publications

(21 citation statements)

References 17 publications

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“…The ARCPI Topology Fig. 1 shows a single-phase ARCPI [34], which consists of a main phase-leg S1/D1, S4/D4, an auxiliary resonant circuit and a protection circuit. The auxiliary resonant circuit consists of two auxiliary switches Sa1/Da1, Sa4/Da4, a resonant inductor Lr and two snubber capacitors Cr1, Cr4 in parallel with the main switches S1/D1, S4/D4.…”

Section: The Arcpi and Experimental Setupmentioning

confidence: 99%

“…The detailed commutation processes of the ARCPI are illustrated in [21,22,34]. Only the turn-on process when the phase current iphase >0, is described briefly in this section.…”

Section: B Operation Of the Arcpimentioning

confidence: 99%

“…This paper aims to provide a useful reference for researchers and engineers to accelerate the adoption of SiC devices in real applications. This paper is based on our previous conference publication [34], which preliminarily compares the performance of soft-switching inverters using SiC MOSFETs or using Si IGBTs. The auxiliary resonant commutated pole inverter (ARCPI) is chosen for study as it is an exemplar PCI with a relatively simple structure, high degree of PWM compatibility and easy control [22,23,34].…”

Section: Introductionmentioning

confidence: 99%

“…This paper is based on our previous conference publication [34], which preliminarily compares the performance of soft-switching inverters using SiC MOSFETs or using Si IGBTs. The auxiliary resonant commutated pole inverter (ARCPI) is chosen for study as it is an exemplar PCI with a relatively simple structure, high degree of PWM compatibility and easy control [22,23,34]. To obtain objective results, the ARCPI using Si IGBTs and using SiC MOSFETs are built on the same three-phase, 6 kW platform with identical printed circuit boards (PCBs), gate drives and device packaging.…”

Section: Introductionmentioning

confidence: 99%

“…1) The experimental prototype is optimised by using different switching devices in this work. Specially, compared with the prototype in [34], when the output power is 6 kW, the efficiency of using SiC MOSFETs and using Si IGBT improves from 95.1% to 95.4% and from 91.2% to 92.3%, respectively. 2) The switching transients including the turn-on and turn-off processes are investigated comprehensively in this work.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

Zhou

Yuan

2020

IEEE Trans. on Ind. Applicat.

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SiC MOSFETs have shown superior characteristics to Si IGBTs, bringing in significant performance improvement such as enabling more compact, higher efficiency converters that are not feasible with conventional Si IGBTs. Currently, there is a lack of systematic and conclusive investigation into soft-switching inverters using SiC MOSFETs in comparison to Si IGBTs. This paper, therefore, presents a comparative evaluation of a softswitching inverter, i.e. the auxiliary resonant commutated pole inverter (ARCPI) using SiC MOSFETs or Si IGBTs. The switching transition, switching device current stress, neutral point ripple current, electromagnetic interference (EMI), efficiency and cost are compared on identical ARCPI setups, i.e. with the same PCBs and under identical driving conditions (gate drivers). Experimental results show that the ARCPI using SiC MOSFETs has better performance than that using Si IGBTs due to its faster switching speed. Firstly, the ARCPI using SiC MOSFETs performs full zero-voltage switching and the switching transition behaviour is more predictable. Unlike Si IGBTs, SiC MOSFETs have no turn-off tail current and forward voltage drop during switching transitions. Secondly, the ARCPI using SiC MOSFETs endures less current stress and smaller ripple current in dc-link capacitors. Thirdly, the ARCPI using SiC MOSFETs exhibits better EMI performance and higher efficiency. Specifically, a maximum 20 dBμV harmonic reduction can be achieved around 800 kHz and a 3.1% improvement in efficiency can be achieved at 6 kW.

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Section: The Arcpi and Experimental Setupmentioning

confidence: 99%

“…The detailed commutation processes of the ARCPI are illustrated in [21,22,34]. Only the turn-on process when the phase current iphase >0, is described briefly in this section.…”

Section: B Operation Of the Arcpimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

Zhou

Yuan

2020

IEEE Trans. on Ind. Applicat.

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Auxiliary Resonant Snubber‐Based Soft‐Switching Converter with Saturable Inductor to Reduce Reverse Recovery Current and Loss

Zhang

et al. 2023

IEEJ Transactions Elec Engng

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The auxiliary resonant snubber‐based converter (ARSC) has the advantages of low dead‐time effect and low switching loss. However, the auxiliary switches suffer from high reverse recovery loss and high reverse recovery current in high‐switching frequency application. Thus, the ARSC with saturable inductor is proposed to solve the problem above. In this paper, the operating principle of ARSC with saturable inductor is analyzed, and the duty cycle operating range that can realize ZVS in the full load range is deduced. The reverse recovery model of the auxiliary switching device body diode is established to analyze the circuit parameters' influence. Then, the influence of the saturable inductor on the reverse recovery peak current and reverse recovery loss is analyzed. Based on the analysis results, the saturable inductance parameters are designed. Finally, based on the experimental platform of the ARSC, the effectiveness of the proposed method is verified. © 2023 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

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Loss and efficiency comparisons of single-phase full-bridge inverters according to switch structures

Kong,

Kim,

Kim

et al. 2023

J. Power Electron.

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Performance Comparison of the Auxiliary Resonant Commutated Pole Inverter (ARCPI) using SiC MOSFETs or Si IGBTs

Cited by 14 publications

References 17 publications

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

Auxiliary Resonant Snubber‐Based Soft‐Switching Converter with Saturable Inductor to Reduce Reverse Recovery Current and Loss

Loss and efficiency comparisons of single-phase full-bridge inverters according to switch structures

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