2020 IEEE 8th International Conference on Photonics (ICP) 2020
DOI: 10.1109/icp46580.2020.9206452
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Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications

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Cited by 2 publications
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“…However, there are several drawbacks of narrow bandgap (<0.7 eV) TPV cells such as low V oc , high dark current, and immature growth technology, and nonoptimal structure design. Recently, Gamel et al [ 192 ] compared the performance of various reported narrow bandgap cells under 1000 K blackbody temperature. Based on their simulation result, In 0.53 Ga 0.47 As has better IV curve characteristic in comparison to Ge, GaSb and InAs, due to the mature structure with FSF and BSF layers which results in lower surface recombination.…”
Section: Narrow Bandgap Materials For Tpvmentioning
confidence: 99%
“…However, there are several drawbacks of narrow bandgap (<0.7 eV) TPV cells such as low V oc , high dark current, and immature growth technology, and nonoptimal structure design. Recently, Gamel et al [ 192 ] compared the performance of various reported narrow bandgap cells under 1000 K blackbody temperature. Based on their simulation result, In 0.53 Ga 0.47 As has better IV curve characteristic in comparison to Ge, GaSb and InAs, due to the mature structure with FSF and BSF layers which results in lower surface recombination.…”
Section: Narrow Bandgap Materials For Tpvmentioning
confidence: 99%