Performance comparison of different SiC-MOSFETs for high-frequency high-power DC-DC converters

Sarriegui, Garikoitz; Beushausen, Steffen; Doncker, Rik W. De

doi:10.1109/pedg.2017.7972521

Cited by 7 publications

(1 citation statement)

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“…They are the key technology for renewable energies, electrical traction systems and future dc grids (1)- (6) . To develop highly efficient and compact dc-dc converters for low-and medium-voltage applications, the advantages of wide-bandgap (WBG) devices are particularly crucial (7) (8) . It is generally assumed, that WBG power semiconductors enable a volume and cost reduction of converters due to higher switching frequencies and thus smaller filter elements (9)-(11) , which in turn facilitate higher levels of integration (12)- (14) .…”

Section: Introductionmentioning

confidence: 99%

Design Challenges of SiC Devices for Low- and Medium-Voltage DC-DC Converters

et al. 2019

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Silicon carbide (SiC) devices are considered as key enablers for the development of highly efficient and compact dc-dc converters for low-and medium-voltage applications. Besides their high temperature capability and low conduction losses, they provide superior switching characteristics. This paper emphasizes the design challenges of SiC devices in the low-and medium-voltage ranges arising from their fast switching speeds. First, detailed measurement results on the switching characteristics of 1200 V SiC devices and the different leakage inductances are presented. The results are assessed with regard to the switching losses as well as the transient voltage and current overshoots. The impact on the switching behavior as a function of leakage inductances is shown. The leakage inductances also influence the resonance frequency of the power module and dc-dc converters. The determination of the size of the EMI filters is a crucial design aspect. Its significance is demonstrated using an 800 V dc-dc converter with commercially available SiC MOSFETs. In addition, zero-voltage switching is emphasized to reduce the impact of the parasitic elements of the module on the switching behavior. However, the performance of 10 kV SiC MOSFETs in a medium-voltage dc-dc converter shows that a significant amount of commutation energy is required to ensure a successful soft-switching transition.

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Section: Introductionmentioning

confidence: 99%