Performance Comparison of BJT and MOS Devices as Temperature Sensing Elements

Aprile, Antonio; Moisello, Elisabetta; Bonizzoni, Edoardo; Malcovati, P.

doi:10.1109/icecs202256217.2022.9970964

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…They can work with very low supply voltages, however they may occupy significant silicon area and can be more prone to process and mismatch variations, thus typically requiring two calibration points. BJT-based temperature sensors, which constitute the most traditional approach, are implemented by considering the voltage difference between two BJT devices, differing in size and/or biasing current [5], [22], [23], [24]. They feature high accuracy but are not compatible with sub-1 V supply voltages, as they are limited by the BJT base-emitter voltage.…”

Section: Introductionmentioning

confidence: 99%

A MOS-Based Temperature Sensor With Inherent Inaccuracy Reduction Enabled by Time-Domain Operation

Moisello

Ippolito

Bruno

et al. 2023

IEEE Trans. Instrum. Meas.

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This article presents a MOS-based ON-chip temperature sensor system addressing both high-resolution and lowinaccuracy requirement, red while requiring a single temperature calibration point. Hence, the proposed temperature sensor system proves to be a low-cost solution, well addressing the requirements of the spreading market of system-on-chips (SoCs), mobile and wearable devices, and consumer electronics in general. The temperature sensor features a two-phase time-domain architecture, which employs as a sensing element a single NMOS transistor, biased alternatively with different currents, thus allowing achieving an inherent inaccuracy reduction. The proposed sensory system, fabricated in a standard 130-nm CMOS process, comprises, along the sensor core, a switched-capacitor analog interface circuit and a 1-bit second-order sigma-delta ( ) analog-to-digital converter (ADC). The proposed temperatureto-digital converter (TDC), experimentally characterized considering a batch of 16 samples, achieves 40-mK resolution at 20-kHz switching frequency and +0.75/−0.92 • C inaccuracy across the −40 • C-90 • C temperature range after one-point calibration at room temperature, consuming 25.4 µW, including the analog buffer added for testing purposes.

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Section: Introductionmentioning

confidence: 99%

A MOS-Based Temperature Sensor With Inherent Inaccuracy Reduction Enabled by Time-Domain Operation

Moisello

Ippolito

Bruno

et al. 2023

IEEE Trans. Instrum. Meas.

Self Cite

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Temperature-to-Digital Converters’ Evolution, Trends and Techniques across the Last Two Decades: A Review

2022

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This paper presents an extensive review of the main highlights in the Temperature-to-Digital Converters (TDCs) field, which has gained importance and research interest throughout the last two decades. The key techniques and approaches that have led to the evolution of this kind of systems are presented and compared; their peculiarities are identified in order to highlight the pros and cons of the different design methods, and the main trade-offs are extracted from this analysis. Finally, the trends that have emerged from the performance evaluation of the large amount of published works in this field are identified with the purpose of providing a directional view of the past, present and future features of these devices.

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Performance Comparison of BJT and MOS Devices as Temperature Sensing Elements

Cited by 2 publications

References 9 publications

A MOS-Based Temperature Sensor With Inherent Inaccuracy Reduction Enabled by Time-Domain Operation

A MOS-Based Temperature Sensor With Inherent Inaccuracy Reduction Enabled by Time-Domain Operation

Temperature-to-Digital Converters’ Evolution, Trends and Techniques across the Last Two Decades: A Review

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