Performance Comparison of 0.13- CMOS Low-Noise Amplifiers Designed Using Different Transistor Layouts for Millimeter-Wave Application

Hassan, S. M. Mohd; Marzuki, Arjuna; Farid, N. E.; Sanusi, R.

doi:10.1109/cjece.2015.2508885

Cited by 2 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first proposed tunable LNA type (A) with noise cancelation and gain boosting approach FIGURE 5 The effect of L g as a gain booster…”

Section: Figurementioning

confidence: 99%

“…The choice of an appropriate technology for the implementation of a LNA is important. Because of its high level of integration, low cost and low power consumption, the CMOS silicon on insulator (SOI) is a good choice for LNA design [5][6][7]. Some recent research works carried out in LNA for MB-OFDM at mm-wave frequency range are as follows.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Ka‐band tunable LNA for MB‐OFDM application

et al. 2021

View full text Add to dashboard Cite

In this paper a novel tuneable LNA is presented. This LNA is designed with two separated structures which both of them utilize noise cancellation technique and some other approaches such as gain boosting and T-transformer feedback. Each proposed LNA has two stages that the first stage is designed based on noise cancellation and the second stage uses common gate structure. The proposed LNA type (A) utilises the switched capacitance in the first stage to tune the centre frequency and a gain boosting in the second stage to increase the gain. The second proposed LNA type (B) has implemented the parallel networks to decrease the change in the gain values of the LNA in different channels. The T-transformer approach is used in each parallel network to decrease the inductors value and improve the input matching. In the second stage, the negative feedback is also employed to control the bandwidth. The proposed LNA is simulated in ADS software with TSMC 130 nm CMOS technology and the layout is designed by Cadence. The LNA type (A) has 22.7 dB gain in 28.8 GHz and the noise figure of 2 dB. The IIP3 for this LNA is 0 dBm in 25.42 GHZ. For the LNA type (B), the gain and noise figure standard deviations are 0.25 and 0.057 respectively which shows minimum variations by frequency tuning. For this LNA, the maximum gain is 20.5 dB and the noise figure is 2 dB at 31.42 GHz. Finally the performances of the proposed LNAs have been compared with those of LNAs which have been recently published.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

show abstract

“…The first proposed tunable LNA type (A) with noise cancelation and gain boosting approach FIGURE 5 The effect of L g as a gain booster…”

Section: Figurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Ka‐band tunable LNA for MB‐OFDM application

et al. 2021

View full text Add to dashboard Cite

show abstract

“…2 Also, LNA design in millimeter wave frequency band will become a focus issue in the age of 5G communication. 3 Normal LNA design is based on massive noise measurement which will induce a lot of cost and longer design period. Under this situation, it's essential to establish noise models to reduce the cost and enhance the efficiency of LNA design.…”

mentioning

confidence: 99%

High Frequency Noise Model of AlGaN/GaN HEMTs

Mao

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Compared with conventional GaAs HEMTs, the larger gate leakage current and more obviously self-heating effects are two unique macroscopic features in AlGaN/GaN HEMTs. This paper presents the study of the effects brought by temperature-dependent R s and R d on noise performance of AlGaN/GaN HEMT. Based on these studies, a noise model up to 35GHz is established. An improved PRC model is proposed and the noise parameters NF min , R n and opt in the frequency band ranging from 0.1GHz to 35GHz is investigated. The effects brought by gate leakage current have been taken into consideration. Then, noise performance under different ambient temperature has been studied based on the high frequency noise model mentioned above. The parameters in the model except the parasitic inductors and capacitors are all temperature-dependent. With the model, the effects brought by temperature-dependent R s and R d have been studied under four different temperatures by comparing the noise performance in two different conditions. Results show that the temperature-dependent characteristics of these two parasitic resistances will have an effect on NF min and R n while little effect on opt . © The Author Nowadays, the wide bandgap semiconductor device-AlGaN/GaN high electron mobility transistors (HEMTs) have become popular in radar and wireless communication applications. Their advantages including higher output power, efficiency and operating frequency over other devices and their ability in terms of operating in extreme environment have drawn lots of attentions.1 Besides, they are also excellent candidates for the design of low noise amplifier in the perspective of low noise amplifier-power amplifier (LNA-PA). Recently, low noise amplifier based on AlGaN/GaN HEMTs which can provide 18.22dB gain at 2.6GHz while the noise figure is only 0.34dB has been reported.2 Also, LNA design in millimeter wave frequency band will become a focus issue in the age of 5G communication. 3Normal LNA design is based on massive noise measurement which will induce a lot of cost and longer design period. Under this situation, it's essential to establish noise models to reduce the cost and enhance the efficiency of LNA design. Several work has been done in the past few decades revolving around noise modeling. Besides the conventional noise model such as Pucel's model, 4 Pospieszalski model 5 and Fukui model, 6 many other novel modeling techniques including physical base noise models 7 have sprung up. However, the frequency band of model cannot reach up to millimeter wave in most cases. [8][9][10][11][12] Under this circumstance, many noise characteristics in high frequency band especially in millimeter wave can't be investigated.Apart from the modeling technique itself, several novel characteristics especially the gate leakage current effect and the electro-thermal characteristics in noise performance have drawn lots of attention. The gate leakage current is one of the hot topics as a result of its great effect on output characteristics of transistors. 13 In Ref. ...

show abstract

Performance Comparison of 0.13- CMOS Low-Noise Amplifiers Designed Using Different Transistor Layouts for Millimeter-Wave Application

Cited by 2 publications

References 17 publications

A Ka‐band tunable LNA for MB‐OFDM application

A Ka‐band tunable LNA for MB‐OFDM application

High Frequency Noise Model of AlGaN/GaN HEMTs

Contact Info

Product

Resources

About