Performance characterization of nonevaporable porous Ti getter films

Li, Chien Cheng; Huang, Jow Lay; Lin, Ran; Lii, Ding-Fwu; Chen, Chia Hao

doi:10.1116/1.2757177

Cited by 12 publications

(6 citation statements)

References 16 publications

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“…Surface area enhancements for the TiO 2 , SiO 2 , and ITO GLAD films studied here are high relative to those found in the literature. − Work by Demirel shows that organic materials are smooth and have a low surface area . The magnetron-sputtered Ti films deposited by Li et al were estimated to have a specific surface area that was an order of magnitude less than that of the oxide films analyzed here .…”

Section: Resultsmentioning

confidence: 46%

“…Organic films have also been studied by researchers such as Demirel who predicted a surface area enhancement of 392 m 2 m −2 for an obliquely deposited poly( p -xylylene) film . Li et al are among those who have studied metal nanostructured films; they determined that titanium GLAD films, deposited at oblique angles of 65 to 80°, had a maximum specific surface area of 25 m 2 g −1 . Additionally, Broughton et al used a SAW technique to measure the surface area enhancement of manganese GLAD films to be up to 9 m 2 m −2 .…”

Section: Introductionmentioning

confidence: 99%

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Surface Area Characterization of Obliquely Deposited Metal Oxide Nanostructured Thin Films

et al. 2009

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The glancing angle deposition (GLAD) technique is used to fabricate nanostructured thin films with high surface area. Quantifying this property is important for optimizing GLAD-based device performance. Our group has used high-sensitivity krypton gas adsorption and the complementary technique of cyclic voltammetry to measure surface area as a function of deposition angle, thickness, and morphological characteristics for several metal oxide thin films. In this work, we studied amorphous titanium dioxide (TiO(2)), amorphous silicon dioxide (SiO(2)), and polycrystalline indium tin oxide (ITO) nanostructures with vertical and helical post morphologies over a range of oblique deposition angles from 0 to 86 degrees. Krypton gas sorption isotherms, evaluated using the Brunauer-Emmettt-Teller (BET) method, revealed maximum surface area enhancements of 880 +/- 110, 980 +/- 125, and 210 +/- 30 times the footprint area (equivalently 300 +/- 40, 570 +/- 70, and 50 +/- 6 m(2) g(-1)) for vertical posts TiO(2), SiO(2), and ITO. We also applied the cyclic voltammetry technique to these ITO films and observed the same overall trends as seen with the BET method. In addition, we applied the BET method to the measurement of helical films and found that the surface area trend was shifted with respect to that of vertical post films. This revealed the important influence of the substrate rotation rate and film morphology on surface properties. Finally, we showed that the surface area scales linearly with film thickness, with slopes of 730 +/- 35 to 235 +/- 10 m(2) m(-2) microm(-1) found for titania vertical post films deposited at angles from 70 to 85 degrees. This characterization effort will allow for the optimization of solar, photonic, and sensing devices fabricated from thin metal oxide films using GLAD.

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Section: Resultsmentioning

confidence: 46%

Section: Introductionmentioning

confidence: 99%

Surface Area Characterization of Obliquely Deposited Metal Oxide Nanostructured Thin Films

et al. 2009

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“…High roughness and porosity induce an increase of both surface gas capacity and sticking probability. The former is simply due to the larger surface area, while the latter is caused by multiple collisions of the impinging molecules inside the surface pores [4,7,12]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The most common and technically accepted way to maintain a controlled ambient environment in a hermetically sealed MEMS device is to use a NEG capable of chemically absorbing active gasses, such as H 2 O, CO, CO 2 , O 2 , N 2 and H 2 . However, the conventional bulk or sheet getters having the property of high pumping speed even at room temperature, could not be used in these minimizing MEMS devices due to the restricted space [5][6][7]. It is urgently required to develop the highly porous thin-film-type getters with several μm thickness for the applications of MEMS vacuum devices.…”

Section: Introductionmentioning

confidence: 99%

ZrCoCe Getter Film Solution for Under Controlled Atmosphere MEMS Packaging

Xu¹,

Cui²,

Cui³

et al. 2015

Proceedings of the International Conference on Advances in Energy, Environment and Chemical Engineering

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Abstract. In order to specifically support the technology trend of increased miniaturization of Micro Electro Mechanical Systems (MEMS) devices, highly porous ZrCoCe non-evaporable getter (NEG) film has been produced by DC magnetron sputtering from a preformed ZrCoCe alloy target. The porous film is composed of columnar crystals, which is further built up with assembled ZrCoCe amorphous or nanocrystalline grains. Gas sorption investigation shows that this film can be activated at low temperature and exhibits excellent stable sorption characteristics. Sorption properties can be further improved with elevating the activation temperatures due to the microstructure modification. The capability of ZrCoCe films withstanding wafer physical or chemical cleaning processes is investigated, indicating their compatibility with MEMS vacuum packaging and the appropriate way to store them. IntroductionDiscrete packages are very critical to assure an excellent hermeticity in many MEMS devices to perform their basic functions properly and to enhance their reliability by keeping these devices away from the harmful external environment [1][2][3][4]. With the technology trend of increased miniaturization of MEMS devices, maintaining the needed vacuum level in such packages for the entire MEMS device life becomes a real technical challenge due to the very high surface to volume ratio [1]. The most common and technically accepted way to maintain a controlled ambient environment in a hermetically sealed MEMS device is to use a NEG capable of chemically absorbing active gasses, such as H 2 O, CO, CO 2 , O 2 , N 2 and H 2 . However, the conventional bulk or sheet getters having the property of high pumping speed even at room temperature, could not be used in these minimizing MEMS devices due to the restricted space [5][6][7]. It is urgently required to develop the highly porous thin-film-type getters with several μm thickness for the applications of MEMS vacuum devices.Ti, Ti-Zr-V, Zr-V-Fe or ZrV 2 are typical NEG film materials, which have been widely studied in sealed-off vacuum technology. Nevertheless, the aforementioned materials may be defined as NEG materials of specific use, and are often described and referred to in patents and technical or commercial bulletins with reference to their use in specific applications [8][9][10]. Zr-Co-rare earth (RE) alloys are specially developed to fulfil some specific integration needs. These alloys are advantageous because they are suitable for general use. they have a relatively low activation temperature 200-500°C, are capable of sorbing a wide variety of gases, and minimize the environmental and safety risks compared with known nonevaporable getter alloys [11].It is known from previous studies that ZrCoRE films have been prepared by RF magnetron sputtering and sorption properties can be improved by optimizing related parameters [12,13]. However, the performance of the above films are too low to fulfil practical applications and mass production. More efficient sorption capacity and higher sta...

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“…The sputtering parameters have significant effects on most other Ti or Zr alloys films microstructures and properties. Previous studies show that the main sputtering parameters of fabricating Ti and Ti-Zr-V films include temperature, sputtering gas pressure and the glancing angle (angle between substrate surface and target surface) [29][30][31][32][33]. However, the correlation of adsorption performance, microstructures and fabrication parameters of Zr-Co-RE films has not been reported before.…”

Section: Introductionmentioning

confidence: 99%

Influence of the sputtering glancing angle on the microstructure and adsorption characteristics of Zr-Co-RE getter films

Zhou¹,

Zhou²,

Liu³

et al. 2020

Mater. Res. Express

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Zr-Co-RE non-evaporable getter films have excellent gas adsorption performance therefore can be used in vacuum sealed electronic devices. The microstructure of getter films has vital effect on adsorption performance. In this paper, Zr-Co-RE films deposited by DC magnetron sputtering at different glancing angles are investigated including microstructures and adsorption characteristics. The surface and cross-sectional morphologies demonstrate loose, porous and columnar-like structure which forms because of low lateral mobility of Zr and Co atoms and shadowing effect of nonperpendicular sputtering. Zr-Co-RE films are amorphous or nanocrystalline structure. The films deposited at 90°glancing angle show large grain size. After Zr-Co-RE films are heated at 350°C for 15 min, the H 2 adsorption capacity and pumping speed at ambient temperature are tested. The films grown at 90°glancing angle have highest initial pumping speed (103.9 ml s −1 cm −2 ), which owe to its more gas diffusion path and active surface, meanwhile, the adsorption capacity is lower than 60°b ecause of difficult and limited diffusion process into getter matrix. The films grown at 60°glancing angle have best adsorption capacity (71.5 Pa.ml cm −2 ) and pumping speed stability. ORCID iDsDetian Li https:/ /orcid.org/0000-0001-6842-6217

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Performance characterization of nonevaporable porous Ti getter films

Cited by 12 publications

References 16 publications

Surface Area Characterization of Obliquely Deposited Metal Oxide Nanostructured Thin Films

Surface Area Characterization of Obliquely Deposited Metal Oxide Nanostructured Thin Films

ZrCoCe Getter Film Solution for Under Controlled Atmosphere MEMS Packaging

Influence of the sputtering glancing angle on the microstructure and adsorption characteristics of Zr-Co-RE getter films

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