Performance assessment of Cu2SnS3 (CTS) based thin film solar cells by AMPS-1D

Hossain, Ejarder Sabbir; Chelvanathan, Puvaneswaran; Shahahmadi, Seyed Ahmad; Sopian, Kamaruzzaman; Bais, Badariah; Amin, Nowshad

doi:10.1016/j.cap.2017.10.009

Cited by 48 publications

(26 citation statements)

References 30 publications

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“…The highest contour area of the J sc is in the upper left corner of the graph, where the thickness of the LHM layer and the peak defect density are the highest and lowest, respectively. FF depends on V oc and the recombination processes in the depletion zone [66]. Therefore, compared with V oc , the trend of FF is similar.…”

Section: The Impact Of Bulk Defect Density Of Ch 3 Nh 3 Pbi 3 Lhm Layer On Device Performancementioning

confidence: 89%

Design and Simulation of High-performance Planar npp+ Heterojunction CH3NH3PbI3 Based Perovskite Solar Cells Using BaSnO3 ETM and Cu2O HTM

Rahman

2021

Preprint

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In recent years, organic-inorganic hybrid perovskite solar cells (PSCs) have received more and more attention due to their high photovoltaic (PV) performance, potentially high efficiency, simple cost-effective, scalable, and vacuum-free fabrication techniques. Concerned, but there are still stability issues in PSCs. The use of inorganic materials as photogenerated carrier transport layers can enhance the stability of PSC. In this report, we designed a PSC model with a novel npp+ heterojunction cell structure of Al/ITO/BaSnO3 /CH3NH3 PbI3 /Cu2O/(Cu or Mo) and analyzed the structure by varying the thickness and carrier concentration of each constituent layer, working temperature, and back-contact metal work function using SCAPS-1D solar cell simulator. The simulation addresses, in particular, the role of the BaSnO3 as electron transport materials (ETM) and Cu2O as hole transport materials (HTM) for the device performance. Using BaSnO3 and Cu2O as ETM and HTM, respectively, this article presents the optimization of cell parameters to improve device performance with a predicted power conversion efficiency (PCE) of 32% for the modeled PSC. The proposed novel structure for PSC showed very good PV performance stability on elevated temperature with the temperature coefficient of PCE of only - 0.112 %K-1.

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Section: The Impact Of Bulk Defect Density Of Ch 3 Nh 3 Pbi 3 Lhm Layer On Device Performancementioning

confidence: 89%

Design and Simulation of High-performance Planar npp+ Heterojunction CH3NH3PbI3 Based Perovskite Solar Cells Using BaSnO3 ETM and Cu2O HTM

Rahman

2021

Preprint

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“…The decrement in p-type resistivity (increment in conductivity) is attributed to the formation of more Cu Sn antisite alongside with V Cu caused by the lower formation energy of antisite defects for Sn-rich compound [5]. However, Cu-rich condition is not desired for higher e ciency solar cell because it possesses more metallic properties rather than semiconductor properties [57]. All samples exhibited high electron mobility possibly due to the presence of Cu 4 SnS 4 phase in those samples as well as from the highly dispersed and delocalized conduction band minimum (CBM).…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

Abdel-Latif

Rezk

Abdel-Moniem

et al. 2021

Preprint

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In this study, the synthesis of Cu2SnS3 (CTS) nanoparticles by solvothermal method using different sulfur precursors is reported. The influence of sulfur precursors on the structure, optical and electrical properties of prepared CTS material is investigated. The sulfur precursor sources have showed a noticeable effect on crystallite size, secondary phases, and resulted CTS nanoparticles structure. Among the four sulfur precursor sources used in this study, thiourea is the only sulfur source that produces CTS with a cubic structure and without the need for thermal treatment. Whereas after sulfurization at 580 ºC, all the four samples attained CTS nanoparticles with diverse properties. Changing the sulfur precursors have clear effects on crystallite size and optical bandgap prepared samples as they ranged from 11.21 to 21.23 nm and from 1.4 to 1.7 eV, respectively. Additionally, Hall effect measurement revealed that all CTS samples are p-type semiconductors with bulk carrier concentrations in 1018 order, which is suitable for various optoelectronic applications such as photovoltaics and photodetectors.

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“…Such a type of investigation provides the guidelines to obtain optimum performance from a designed solar cell without fabricating it in the laboratory. For numerical simulation of heterojunction solar cells, a solar cell capacitance simulator (SCAPS), , analysis of microelectronic and photonic structures (AMPS), , and Silvaco TCAD , have been popularly used in recent years.…”

Section: Introductionmentioning

confidence: 99%

Role of a Solution-Processed V₂O₅ Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells

2021

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In this research, a heterostructure of the CuO-ZnO-based solar cells has been fabricated using low-cost, earth-abundant, non-toxic metal oxides by a low-cost, low-temperature spin coating technique. The device based on CuO-ZnO without a hole transport layer (HTL) suffers from poor power conversion efficiency due to carrier recombination on the surface of CuO and bad ohmic contact between the metal electrode and the CuO absorber layer. The main focus of this research is to minimize the mentioned shortcomings by a novel idea of introducing a solution-processed vanadium pentoxide (V 2 O 5 ) HTL in the heterostructure of the CuO-ZnO-based solar cells. A simple and low-cost spin coating technique has been investigated to deposit V 2 O 5 onto the absorber layer of the solar cell. The influence of the V 2 O 5 HTL on the performance of CuO-ZnO-based solar cells has been investigated. The photovoltaic parameters of the CuO-ZnO-based solar cells were dramatically enhanced after insertion of the V 2 O 5 HTL. V 2 O 5 was found to enhance the open-circuit voltage of the CuO-ZnO-based solar cells up to 231 mV. A detailed study on the effect of defect properties of the CuO absorber layer on the device performance was theoretically accomplished to provide future guidelines for the performance enhancement of the CuO-ZnO-based solar cells. The experimental results indicate that solution-processed V 2 O 5 could be a promising HTL for the low-cost, environment-friendly CuO-ZnO-based solar cells.

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Performance assessment of Cu2SnS3 (CTS) based thin film solar cells by AMPS-1D

Cited by 48 publications

References 30 publications

Design and Simulation of High-performance Planar npp+ Heterojunction CH3NH3PbI3 Based Perovskite Solar Cells Using BaSnO3 ETM and Cu2O HTM

Design and Simulation of High-performance Planar npp+ Heterojunction CH3NH3PbI3 Based Perovskite Solar Cells Using BaSnO3 ETM and Cu2O HTM

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

Role of a Solution-Processed V₂O₅ Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells

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Performance assessment of Cu2SnS3 (CTS) based thin film solar cells by AMPS-1D

Cited by 48 publications

References 30 publications

Design and Simulation of High-performance Planar npp+ Heterojunction CH3NH3PbI3 Based Perovskite Solar Cells Using BaSnO3 ETM and Cu2O HTM

Design and Simulation of High-performance Planar npp+ Heterojunction CH3NH3PbI3 Based Perovskite Solar Cells Using BaSnO3 ETM and Cu2O HTM

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

Role of a Solution-Processed V2O5 Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells

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Role of a Solution-Processed V₂O₅ Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells