Performance and limitations of AlGaN/GaN HFETs grown on sapphire and SiC substrates

Vescan, A.; Dietrich, R.; Wieszt, A.; Lee, J.-L.; Schurr, A.; Leier, H.; Daumiller, I.; Kab, N.; Kohn, E.

doi:10.1109/cornel.2000.902546

Cited by 7 publications

(2 citation statements)

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“…Introduction GaN based wide band gap semiconductor materials have been intensively studied for applications in high temperature, high frequency, and high power electronics and significant progress has been made recently. However, there are still two main issues: the large gate leakage current [1] and current collapse [2] at high drain current or a high RF-input drive on the gate. To overcome these problems, it is essential to understand the the AlGaN/GaN heterostructure surface and to develop a suitable surface passivation process [3,4].…”

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confidence: 99%

Surface Passivation of AlGaN/GaN HFETs Using AlN Layer Deposited by Reactive Magnetron Sputtering

Liu

Bardwell

McAlister

et al. 2002

phys. stat. sol. (c)

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In this paper we show the characteristics of an AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistor (MISFET) which uses an AlN film as the gate insulator, a passivated MISFET with another layer of AlN over the gate, a regular AlGaN/GaN heterostructure field effect transistor (HFET) and an AlN passivated regular HFET. The AlN insulating layer was deposited by Reactive Magnetron Sputtering. The thickness of each AlN passivation layer is about 50 nm. The gate leakage currents for the MISFET, passivated MISFET, and passivated HFET were much smaller than that for the regular HFET. We observed the current collapse for the regular HFET and the passivated MISFET, unstable DC characteristics for the MISFET, and the suppression of the current collapse for the passivated HFET.1. Introduction GaN based wide band gap semiconductor materials have been intensively studied for applications in high temperature, high frequency, and high power electronics and significant progress has been made recently. However, there are still two main issues: the large gate leakage current [1] and current collapse [2] at high drain current or a high RF-input drive on the gate. To overcome these problems, it is essential to understand the the AlGaN/GaN heterostructure surface and to develop a suitable surface passivation process [3,4] In this letter, the comparative studies of an AlGaN/GaN MISFET which use an AlN film as the gate insulator, a passivated MISFET with another layer of AlN over the gate, a regular AlGaN/GaN HFET and an over-gate passivated HFET will be reported.

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confidence: 99%

Surface Passivation of AlGaN/GaN HFETs Using AlN Layer Deposited by Reactive Magnetron Sputtering

Liu

Bardwell

McAlister

et al. 2002

phys. stat. sol. (c)

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“…Extensive research efforts globally have been devoted to obtaining high quality Gallium Nitride (GaN) and related nitrides because of their promising applications in many optoelectronic and microelectronic devices such as blue lasers [9], blue-green, UV light emitting diodes (LEDs) [10], UV photodetectors (PDs) [11], heterostructure field effect transistors (HFETs) [12] and high electron mobility transistors (HEMTs) [13]. However, the performance of these devices has been limited by the material quality due to the lack of an ideal substrate.…”

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confidence: 99%