Performance and capabilities of the Canadian Dragon: The SGM beamline at the Canadian Light Source

Regier, Tom; Krochak, J.; Sham, Tsun‐Kong; Hu, Yunfeng; Thompson, J.; Blyth, R. I. R.

doi:10.1016/j.nima.2007.08.071

Cited by 183 publications

(142 citation statements)

References 9 publications

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“…C NEXAFS spectra were collected using the spherical grating monochromator (SGM) beamline 11ID-1 at the Canadian Light Source (CLS) 41,42 . To minimize X-ray exposure, spectra were collected in step scan mode (in 0.25 eV steps from 270 to 320 eV) with a dwell time of 20 ms. After each scan, the beam was moved to a new spot on the sample, collecting a total of 50-70 scans for each sample.…”

Section: Methodsmentioning

confidence: 99%

Airborne soil organic particles generated by precipitation

et al. 2016

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Section: Methodsmentioning

confidence: 99%

Airborne soil organic particles generated by precipitation

et al. 2016

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“…Soft XAS were measured using the spherical grating monochromator (SGM) beamline of the Canadian Light Source (CLS) at the University of Saskatchewan. 21 To ensure the entire implantation region was probed, spectra were collected using the bulk sensitive total fluorescence yield detection scheme, again with horizontal plane-polarized incident radiation. Note that for the L 2;3 edges of transition metal systems often the fluorescence yield is not a true measure of the XAS since the 3d !…”

Section: Methodsmentioning

confidence: 99%

The formation of Ti–O tetrahedra and band gap reduction in SiO2 via pulsed ion implantation

Green

Zatsepin

Hunt

et al. 2013

Journal of Applied Physics

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Titanium ions are implanted into amorphous SiO 2 at two different fluences using pulsed ion implantation, and the resulting samples are annealed. Bulk sensitive soft X-ray absorption spectroscopy of the Ti L 2;3 edge reveal strikingly different spectra for the two fluences. Spectral simulations using multiplet crystal field theory show clearly that for low fluence the Ti ions have a local octahedral coordination, while at higher fluence the formation of Ti 4þ -O tetrahedra dominates. Using O K-edge X-ray absorption and emission, the effect of the Ti states on the valence and conduction bands of the host SiO 2 is revealed. With the introduction of Ti tetrahedra, the band gap reduces from about 8 eV to just over 4 eV, due entirely to the Ti 3d conduction band states. These results demonstrate the possibility to obtain Ti-O tetrahedra in silica by Ti ion implantation and a suitable thermal treatment, clarify the mechanism of band gap reduction with Ti doping in SiO 2 , and demonstrate the sensitivity of L-edge X-ray absorption with a multiplet crystal field theory analysis to the Ti coordination of novel materials. V C 2013 American Institute of Physics. [http://dx

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“…The calculations on SnO at ambient pressure are compared to non-resonant oxygen K -edge X-ray emission spectroscopy (XES) measurements, performed at Beamline 8.0.1 of the Advanced Light Source (ALS) at Lawrence Berkeley National Laboratory [8], and oxygen K -edge X-ray absorption spectroscopy (XAS) measurements, performed at the spherical grating monochromator beamline of the Canadian Light Source (CLS) at the University of Saskatchewan [9]. The absorption measurements were acquired in the bulk sensitive total fluorescence yield (TFY) mode [10,11].…”

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Nature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnO

et al. 2011

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We have investigated the electronic structure and the Fermi surface of SnO using density functional theory (DFT) calculations within recently proposed exchange-correlation potential (PBE+mBJ) at ambient conditions and high pressures up to 19.3 GPa where superconductivity was observed. It was found that the Sn valence states (5s, 5p, and 5d ) are strongly hybridized with the O 2p states, and that our DFT calculations are in good agreement with O K -edge X-ray spectroscopy measurements for both occupied and empty states. It was demonstrated that the metallic states appearing under pressure in the semiconducting gap stem due to the transformation of the weakly hybridized O 2p -Sn 5sp subband corresponding to the lowest valence state of Sn in SnO. We discuss the nature of the electronic states involved in chemical bonding and formation of the hole and electron pockets with nesting as a possible way to superconductivity. PACS: 74.20.Pq, 74.70.Ad, 74.62.Fj, 78.70.En Guided by research in iron pnictides, superconductivity was observed recently in the layered (α-PbO-type) crystal SnO at high pressure with T c = 1.4 K and B c2 = 0.6 T at P = 9.3 GPa [1]. It was found that electronic structure of SnO at 7 GPa is that of a metal with a hole pocket at the Γ-point and electron pockets at the M-point of Brillouin zone, i.e. both the crystal and electronic structure are similar to those of superconducting iron pnictides (FeAs and FeSe-based compounds) [1]. On the other hand, unlike the iron pnictides, SnO is nonmagnetic and does not show any structural phase transitions up to P = 19.3 GPa [2].Thus far, the available electronic structure calculations of SnO at high pressure have been performed for high pressures up to 10 GPa (where V/V 0 =0.90) and have been limited to calculation of the E(k) dispersion curves [1,3,4,5]. The minor role of Sn 5p states near the Fermi level at ambient pressure was examined by Watson [6], he showed that these states are shifted to lower energies due to the hybridized combination of the O 2p and Sn 5s states just below the Fermi level to provide stability for the litharge structure.The superconductivity of SnO and layered iron pnictides is increasingly being examined from the perspective of the Fermi surface which is often calculated by density functional theory (DFT). Because the superconductivity of SnO arises during a semiconductor to 1)

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Performance and capabilities of the Canadian Dragon: The SGM beamline at the Canadian Light Source

Cited by 183 publications

References 9 publications

Airborne soil organic particles generated by precipitation

Airborne soil organic particles generated by precipitation

The formation of Ti–O tetrahedra and band gap reduction in SiO2 via pulsed ion implantation

Nature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnO

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