Performance analysis of undoped and Mg-doped ZnO/p-Si heterojunction diodes grown by sol–gel technique

Singh, Satyendra Kumar; Hazra, Purnima

doi:10.1007/s10854-017-8486-x

Cited by 9 publications

(7 citation statements)

References 31 publications

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“…Clearly, the optical bandgap energy, which was derived from the Tauc's plot, increased with the Mg composition from 3.25 eV for ZnO to 3.65 eV for Mg 0.3 Zn 0.7 O (Table 1). Several research groups have reported that the blue-shift of the absorption edge and tailoring of the corresponding optical bandgap of the Mg x Zn 1−x O thin films can be attributed to the incorporation of Mg ions into the ZnO lattice and is caused by the quantum confinement effect [25,29]. We confirmed that the optical bandgap of the Mg x Zn 1−x O thin films could be tuned by changing the Mg content.…”

Section: Resultssupporting

confidence: 76%

“…It is well known that the diffraction peak broadening of polycrystalline metal oxide thin films is associated not only with crystallite size reduction but also lattice strain induced in the thin films [24]. While the ionic radii of the dopant Mg 2+ (0.057 nm) is relatively smaller than that of the host Zn 2+ (0.060 nm), some Zn 2+ ions in the crystal lattice of the host oxide material were easily replaced by Mg 2+ ions (>30 at.%) without changing the crystal structure, proving the possibility of MgZnO solid solution formation [25,26]. The substitution of Mg 2+ ions for Zn 2+ ions slightly distorted the lattice of the ZnO crystal.…”

Section: Resultsmentioning

confidence: 98%

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Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

2019

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The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on MgxZn1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of MgxZn1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the films rose from 6.1 × 102 to 1.4 × 104 Ω·cm with an increase in Mg content from x = 0 to x = 0.3. Compared with those of the pure ZnO thin film, the PL emission peaks of the MgZnO thin films showed an apparent blue-shift feature in the UV and visible regions. The photo-detection capability was investigated under visible, UVA, and UVC light illumination. Linear I-V characteristics were obtained in these ZnO-based photodetectors under dark and light illumination conditions, indicating an ohmic contact between the Au electrodes and ZnO-based thin films. It was found that the pure ZnO photodetector exhibited the best photoconductivity gain, percentage of sensitivity, and responsivity under UVA illumination. Under UVC illumination, the photoconductivity gain and percentage of sensitivity of the MgZnO photodetectors were better than those of the pure ZnO photodetector.

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Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 98%

Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

2019

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“…The full width half maximum (FWHM) of the (0002) Mg x Zn 1 − x O peak is found to be ≈0.21°, which indicates good crystalline quality of these grown films. The crystalline grain size ( D ) was calculated using Sherrer's formula D = 0.9 × λ / β × cos θ , [ 21,25 ] where θ is the angle of diffraction, β is the FWHM measured in radians from the ω – 2θ scan, and λ = 1.54 Å is the wavelength of the incident X‐ray. The crystalline size of the film is estimated to be ≈38 nm.…”

Section: Resultsmentioning

confidence: 99%

“…[9] Singh and Hazra reported performance analysis of Mg-doped ZnO/p-Si heterojunction diodes with different Mg concentrations grown by sol-gel technique. [21] However, for growth of high-quality metal-oxide thin films, pulsed laser deposition (PLD) has always been a preferred choice due to its nonequilibrium growth nature and better control on growth conditions. [22,23] Despite these, reports on n-Mg x Zn 1Àx O/p-Si heterojunctions fabricated by PLD technique are scanty.…”

Section: N-mgmentioning

confidence: 99%

Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐Mg_xZn_1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure

Chetia

Das

Ajimsha

et al. 2020

Physica Status Solidi (a)

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Herein, diode characteristics of n‐MgxZn1−xO/p‐Si heterojunctions grown by pulsed laser deposition at different oxygen ambient pressures are investigated. It is found that the heterojunctions grown at lower oxygen growth pressure of 1.0 × 10−2 mbar and below do not show rectifying diode‐like behavior, whereas those grown at higher oxygen pressures at and above 2.5 × 10−2 mbar exhibit perfect diode‐like rectifying characteristics. The diode characteristics are found to improve significantly with increasing oxygen ambient pressure during the growth of MgxZn1−xO film. The current–voltage measurements show that the n‐MgxZn1−xO/p‐Si heterojunction diode grown at a higher oxygen ambient pressure of ≈1.0 × 10−1 mbar has the lowest reverse saturation current of ≈19 nA and highest rectification ratio of ≈1.4 × 104. The capacitance–voltage measurements reveal that the depletion layer width of heterojunction diodes increases manifold with increasing oxygen ambient pressure during the growth of MgxZn1−xO, which is understood in terms of decrease in carrier concentrations in the MgxZn1−xO thin films grown at higher oxygen ambient pressures. The n‐MgxZn1−xO/p‐Si heterojunction diodes, grown at high oxygen ambient pressures, with low reverse saturation current, high rectification ratio, and large depletion width may have potential application in wide‐bandgap nanoelectronic devices and UV enhanced photodetectors.

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“…The values of the root mean square (RMS) roughness were obtained for undoped ZnO, 1%, 3%, 5% and 10% In doped films as 15.74 nm 13.24 nm 13.06 nm 17.52 nm 30.76 nm, respectively. The increase in the roughness of the films with doping can be ascribed to the deposition of Indium oxide nanoparticles on the surface of the ZnO films [19]. Increasing the surface roughness of the films with the doping may cause an increase in the optical absorption of the films.…”

Section: Resultsmentioning

confidence: 99%

The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

Rüzgar

2020

Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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The heterojunction photodiodes with undoped ZnO and Indium (In) doping ZnO thin films have been grown on p type silicon wafer by solution based spin coating method. The crystal structure analyzes of the films show that they have amorphous nature. The electrical characterizations of diodes have been performed by classical I-V and C-G-V technique. The minimum ideality factor of 3.97 and minimum series resistance of 7.2 kΩ have been recorded from 5% In doping ZnO/p-Si diode. The phototransient measurements show that photodiodes react fast to visible light and have a good reproducibility switching cycle. Similarly, the highest photosensitivity of 3.15×10 3 and responsivity of 2.02 A/W have been obtained from 5% In doping ZnO/p-Si photodiode. This study indicates that the doping of In improves the electrical and optoelectrical performance of ZnO based photodiodes.

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Performance analysis of undoped and Mg-doped ZnO/p-Si heterojunction diodes grown by sol–gel technique

Cited by 9 publications

References 31 publications

Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐Mg_xZn_1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure

The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

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Performance analysis of undoped and Mg-doped ZnO/p-Si heterojunction diodes grown by sol–gel technique

Cited by 9 publications

References 31 publications

Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐MgxZn1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure

The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

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Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐Mg_xZn_1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure