Performance analysis of three-dimensional-triple-level cell and two-dimensional-multi-level cell NAND flash hybrid solid-state drives

Sakaki, Yoshiyuki; Yamada, Tomoaki; Matsui, Chihiro; Yamaga, Yusuke; Takeuchi, Ken

doi:10.7567/jjap.57.04fe03

Cited by 2 publications

(2 citation statements)

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“…45 Hybrid SSDs that consist of single bit cells and multistates cells have been proposed to provide a trade-off between density and reliability. 46,47 Furthermore, some efforts have demonstrated that NMSM based on the charge effect can be extended to a carbon nanotube, 48 nanocrystals, 49,50 nanowires, 51 two-dimensional materials, 52−55 and organic materials. 56−59 3.…”

Section: Flash Nmsmmentioning

confidence: 99%

“…Besides, data stored in discrete charge trapping sites were reported in silicon nitride − or metal nanoparticles. − Another effort is to extend memory window based on amorphous In–Ga–Zn–O thin-film transistors , with a dual-gate cell . Hybrid SSDs that consist of single bit cells and multistates cells have been proposed to provide a trade-off between density and reliability. , Furthermore, some efforts have demonstrated that NMSM based on the charge effect can be extended to a carbon nanotube, nanocrystals, , nanowires, two-dimensional materials, − and organic materials. − …”

Section: Flash Nmsmmentioning

confidence: 99%

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Nonvolatile Multistates Memories for High-Density Data Storage

Cao

Lü

Wang

et al. 2020

ACS Appl. Mater. Interfaces

116

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In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.

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