Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress

Abstract

In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.

Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes

“…Waveguides in III-V materials, which include multi-mode interference (MMI) structures and lasers, might be designed with small refractive index differences, which makes the performance of these waveguide structures sensitive to the effects of a spatially varying strain [1][2][3][4][5]. The refractive index of a material, through the photo-elastic effect, is a function of strain in the material [6] (pp.…”