Performance analysis of series: shunt configuration based RF MEMS switch for satellite communication applications

Kumar, Prem; Sravani, K. Girija; Sailaja, B. V. S.; Karuveettil, Vineetha; Guha, Koushik; Rao, K. Srinivasa

doi:10.1007/s00542-018-3907-1

Cited by 29 publications

(9 citation statements)

References 20 publications

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“…Here the voltage difference between side beams and biasing pads is zero because of voltage is not supplied to the biasing pads. Here, the switch develops an upstate capacitance which is given [21] by…”

Section: Electrostatic Actuation Of the Switchmentioning

confidence: 99%

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Kondaveeti

Guha

Rao

et al. 2019

IET Circuits, Devices & Systems

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This study reports the design and analysis of novel step structure RF micro-electromechanical system (MEMS) switch for low pull-in voltage, low insertion loss and high isolation by using uniform single meander. The central beam of the membrane is designed with 0.5 µm lower than the side beams to form a step-down structure which reduces the pull-in voltage. Stress analysis, electromechancial, switching time, quality factor and RF analysis have done to understand the behavioural characteristics of the proposed step-down switch. The analysis has been carried out for different beam and dielectric materials among them switch with gold material exhibits low pull-in voltage of 4.7 V, low insertion loss <1 dB and high isolation of −38.3 dB at 28.2 GHz for silicon nitride. The switch also shows good quality factor of 0.95 for gold material along with high capacitance ratio of 132. The upstate capacitance of 56.8 pF contributes low return loss and made the switch to transmit the signal up to 26.2 GHz and provides 7.2 pF of downstate capacitance to produce high isolation at 26.2 GHz which is efficiently used for Kband satellite applications.

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Section: Electrostatic Actuation Of the Switchmentioning

confidence: 99%

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Kondaveeti

Guha

Rao

et al. 2019

IET Circuits, Devices & Systems

Self Cite

View full text Add to dashboard Cite

show abstract

“…The modified switch reduces the pull in voltage, spring constant and stiction problem, by introducing the meanders in the proposed structure. Two types of meanders i.e uniform and non-uniform, at beginning the switch uses single uniform and non-uniform meanders [12][13][14]. For both the switches solid mechanical analysis, electromechanical analysis and electromagnetic analysis are done.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Non-Uniform Meander RF MEMS Switch

Mohan¹

2021

ITII

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This paper aimed to design and analysis of non-uniform meander capacitive shunt RF MEMS switch. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The selection of materials for the beam and dielectric layer is expressed in this paper and also shown the performance depends on materials utilized for the design. The high isolation of -31.15dB actuating at the pull-in voltage of 7.69V with a spring constant of 3.28N/m produced the switch and is obtained by the optimization process. Capacitive contact switches have capability of power handling. The actuated switch state provides an excellent isolation. It shorts the ground by RF signal. MEMS technology is the integration of electrical and mechanical components on single platform i.e. substrate [10]. From the literature, various researchers have proposed different RF MEMS Switch, but still there few challenges on optimization of the Switch for best performance. The electromechanical analysis such as Upstate, Downstate capacitances and stress analysis have been carried out. The performance of the switch is analyzed by taking appropriate materials selected by Ashby’s approach. These optimized dimensions are feasible to fabricate. The substrate height, material for the substrate and coplanar waveguides are used for the impendence matching. For obtaining the less pull in voltage overlapping area is to be increased.

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“…The modified switch is to obtain lowest possible pull in voltage, spring constant and stiction problem, by introducing the meanders in the proposed structure. Two types of meanders i.e uniform and non uniform meandering techniques are used for the switch, [12][13][14]. For both the switches solid mechanical analysis and electromechanical analysis and also electromagnetic analysis are done.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Uniform Meander RF MEMS Switch

Mohan¹

2021

TURCOMAT

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This paper projected to uniform meander RF MEMS capacitive shunt switch design and analysis. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The materials selection for the dielectric layer and beam is explained in this paper and also shown the performance depends on materials utilized for the design. The good isolation of -31dB is achieved for the pull-in voltage of 11.97V with a spring constant of 2.38N/m is produced by the switch and is obtained by the optimization process at a frequency of 38GHz.

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Performance analysis of series: shunt configuration based RF MEMS switch for satellite communication applications

Cited by 29 publications

References 20 publications

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Design and Analysis of a Non-Uniform Meander RF MEMS Switch

Design and Analysis of a Uniform Meander RF MEMS Switch

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