Performance analysis of RF-sputtered ZnO/Si heterojunction UV photodetectors with high photo-responsivity

Singh, Satyendra Kumar; Hazra, Purnima; Tripathi, Shweta; Chakrabarti, P.

doi:10.1016/j.spmi.2015.12.036

Cited by 89 publications

(20 citation statements)

References 22 publications

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“…In addition, the exciton binding of ZnO is 60 meV, far higher than thermal ionization (26 meV) under room temperature. Therefore, its excitons can remain stable at room temperature, and realize effective excitation and emission at room temperature, make them suitable for shortwave photoelectric devices [ 12 , 51 , 52 , 53 , 54 , 55 , 56 ] and a very good candidate for photonics devices working in the UV range [ 15 , 57 , 58 , 59 , 60 ]. Various methods have been used in attempts to synthesize ZnO nanomaterials for use in next-generation photoelectric devices.…”

Section: Materials For Uv Detectorsmentioning

confidence: 99%

Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

Zou

Zhang

et al. 2018

Sensors

251

143

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Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.

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Section: Materials For Uv Detectorsmentioning

confidence: 99%

Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

Zou

Zhang

et al. 2018

Sensors

251

143

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“…4. These results revealed that fabricated various PCBM doped Al/PCBM:ZnO/p-Si devices can be used in optoelectronic devices such as photodiodes or photodetectors [74]. Furthermore, the increasing speed of the reverse current decreased with PCBM doping due to the electron acceptor behavior of the PCBM.…”

Section: Resultsmentioning

confidence: 85%

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Öztürk

2021

J Mater Sci: Mater Electron

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The light can be detected by various devices such as photoconductors, photodetectors, phototransistors, solar cells and photodiodes, and the light can be employed energy harvesting as well as sensing applications. Various materials can be utilized to raising of the efficiency of light-based devices. In present study, metalsemiconductor (MS) devices with various [6,6]-Phenyl C61-butyric acid methyl ester (PCBM) doped zinc oxide (ZnO) interfacial layer were fabricated for photodiode applications. Commercially purchased PCBM and ZnO were mixed in order to obtain undoped, 3%, 5%, and 10% PCBM doped ZnO interfacial layer for Al/PCBM:ZnO/p-Si devices. The obtained solutions were layered on the p-type silicon (p-Si) substrades by spin coating method. The thermal evaporation technique was utilized to deposit Al metal electrodes both back and front sides. The morphological properties of the fabricated devices were characterized by AFM. The morphological images of the AFM revealed that PCBM doping affected the surface morphology as well as surface roughness of the ZnO layers. I-V measurements were carried out in the dark and under varying illumination conditions for electrical properties. The devices exhibited good rectifying properties at around 10 3 rates, both dark and various illumination conditions, according to I-V graphs. The junction parameters of the produced devices were determined by using thermionic emission, Norde, and Cheung models from the I-V characteristics of the devices. The devices have high ideality factors and these values generally fluctuate with varying PCBM doping amounts. The current transient measurements show that PCBM doping provide increasing in the light response capacity. According to the results, the devices can be employed as photodiode and photodetector applications for the further works in the industry.

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“…7g) 134 vertically stacked ZnO sheet-like nanorod p-n homojunction, 135 ZnO microwire p-n homojunction, 136 and ZnO NW p-n homojunction. 137 Heterojunctions of ZnO nanomaterials with other semiconductors have been introduced to form p-n junctions or n-n junctions depending on the photoactive materials for UV PDs, for example, ZnO/Si heterojunction, 138 ZnO NWs/p-GaN heterojunction, 139 n-Ga:ZnO NRs/p-GaN heterojunction, 140 NiO/ ZnO heterojunction, 141 ZnO/GaN heterojunction, 142 ZnS-ZnO heterojunction, [143][144][145][146] p-GaN/n-ZnO NRs heterojunction, 147 ZnO NR/graphene heterostructure, 148 and ZnO NP-graphene coreshell heterostructure. 149 Unlike homojunctions, photogenerated electrons and holes are separated by internally generated and externally applied electric elds under UV illumination.…”

Section: Conventional Uv Photodetectorsmentioning

confidence: 99%