Performance analysis of RF MEMS capacitive switch with non uniform meandering technique

Guha, Koushik; Kumar, Mithlesh; Parmar, Ajay; Baishya, Srimanta

doi:10.1007/s00542-015-2545-0

Cited by 28 publications

(7 citation statements)

References 13 publications

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“…Among other actuation techniques, the utmost preferred actuation mechanism in capacitive radio frequency MEMS shunt switch is electrostatic actuation offering compact size, low power consumption and noncomplicated in fabrication compared to thermal and piezoelectric actuation techniques. 8 The piezoelectric actuation techniques is nothing but relative to the electric polization results based on the application mechanical stress. The switch is actuated electrostatically by the introduction of a dc voltage between the MEMS switch and the coplanar waveguide and leads the membrane to pull down on the dielectric layer on account of the generated electrostatic force.…”

Section: Rf Mems Shunt Capacitive Switch Workingmentioning

confidence: 99%

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications

Narzary

Kumar

Bhattacharjee

et al. 2020

Trans Emerging Tel Tech

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An innovative capacitive radio frequency MEMS shunt switch with a unique shaped spring is designed and analyzed using COMSOL Multiphysics 5.4. The proposed switch using Hafnium oxide (HfO 2) and Niobium pentoxide (Nb 2 O 5) as the dielectric material between the transmission line and the deflecting gold membrane provides certain advantageous benefits with respect to performance parameters such as low actuation voltage, less spring constant, good isolation, low insertion loss, small size, and high capacitance ratio compared to other designs. A combination of three-turn meander and C-shaped spring having a spring constant of 0.186 N/m helps in achieving convenient actuation voltage. For 1, 1.5, and 2 μm air gaps, the actuation voltages required to bring the switch to ON mode are 1.77, 3.24, and 4.96 V respectively with Nb 2 O 5 as the dielectric layer and 1.8, 3.28, and 5.01 V respectively with HfO 2 as the dielectric layer respectively. At 2-μm air gap, the capacitance ratio is 329 for Nb 2 O 5 and 113 for HfO 2. RF analysis using ANSYS HFSS software shows the isolation of −19.41 dB at 11 GHz and insertion loss as low as −0.27 dB at 15 GHz. The proposed switch operating within the range of 1 to 30 GHz gives optimum results compared to other devices and is suitable for wireless communication and satellite payload applications.

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Section: Rf Mems Shunt Capacitive Switch Workingmentioning

confidence: 99%

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications

Narzary

Kumar

Bhattacharjee

et al. 2020

Trans Emerging Tel Tech

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“…3 and gap between the electrodes has to be reduced. The general equation for electrostatic force [19] is given by…”

Section: Step Structure Rf Mems Capacitive Switch and Its Operationmentioning

confidence: 99%

“…3 and gap between the electrodes has to be reduced. The general equation for electrostatic force [19] is given by

F_{es} = \frac{ε A V^{2}}{2 d^{2}}

Fig. 6 shows the schematic of step‐down beam structure along with the normal fixed–fixed beam.…”

Section: Step Structure Rf Mems Capacitive Switch and Its Operationmentioning

confidence: 99%

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Kondaveeti

Guha

Rao

et al. 2019

IET Circuits, Devices & Systems

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This study reports the design and analysis of novel step structure RF micro-electromechanical system (MEMS) switch for low pull-in voltage, low insertion loss and high isolation by using uniform single meander. The central beam of the membrane is designed with 0.5 µm lower than the side beams to form a step-down structure which reduces the pull-in voltage. Stress analysis, electromechancial, switching time, quality factor and RF analysis have done to understand the behavioural characteristics of the proposed step-down switch. The analysis has been carried out for different beam and dielectric materials among them switch with gold material exhibits low pull-in voltage of 4.7 V, low insertion loss <1 dB and high isolation of −38.3 dB at 28.2 GHz for silicon nitride. The switch also shows good quality factor of 0.95 for gold material along with high capacitance ratio of 132. The upstate capacitance of 56.8 pF contributes low return loss and made the switch to transmit the signal up to 26.2 GHz and provides 7.2 pF of downstate capacitance to produce high isolation at 26.2 GHz which is efficiently used for Kband satellite applications.

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“…MEMS switches with serpentine flexure structures in centimeter band have been reported in [ 25 , 26 , 27 , 28 ]. Tang et al [ 25 ] designed a single-bridge MEMS capacitive switch and a double-bridge MEMS capacitive switch with serpentine folded suspensions to achieve higher isolation at X-band frequencies, and the measurement results presented an isolation of 16.5–28 dB for the single-bridge switch and 25–35 dB for the double-bridge switch at 10–13 GH.…”

Section: The Research Status Of Mems Switches In Different Frequenmentioning

confidence: 99%

“…The isolation was 28 dB at 10 GHz, and the insertion loss was 0.4 dB at 10G Hz. High isolation of 80 dB at 20 GHz, low insertion loss of 0.4 dB, and low-driving voltage of 2.45 V were achieved in the capacitive MEMS switch designed using serpentine flexure bridge with holes and a dielectric layer made of HfO 2 with a spring constant of 25 [ 28 ].…”

Section: The Research Status Of Mems Switches In Different Frequenmentioning

confidence: 99%

Research and Analysis of MEMS Switches in Different Frequency Bands

Tian

Yuan

2018

Micromachines

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Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS) switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1) utilizing combinations of several switches in series; (2) covering a float metal layer on the dielectric layer; (3) using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4) developing MEMS switches using T-match and π-match; (5) designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS) technology and reconfigurable MEMS’ surfaces; (6) employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7) selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8) adopting gold alloying with carbon nanotubes (CNTs), hermetic and reliable packaging, and mN-level contact.

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Performance analysis of RF MEMS capacitive switch with non uniform meandering technique

Cited by 28 publications

References 13 publications

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Research and Analysis of MEMS Switches in Different Frequency Bands

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Performance analysis of RF MEMS capacitive switch with non uniform meandering technique

Cited by 28 publications

References 13 publications

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb2O5 and HfO2 dielectric for satellite payload applications

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb2O5 and HfO2 dielectric for satellite payload applications

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Research and Analysis of MEMS Switches in Different Frequency Bands

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Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications