Performance analysis ofa‐Si:H p–i–n solar cells with and without a buffer layer at the p/i interface

Abstract

Light soaking experiments have been conducted on a‐Si:H p‐i‐n solar cells with a silicon carbide buffer layer at the p/i interface. The rate of light induced degradation in the performance of these solar cells is higher in the initial stages of light soaking and assumes the same levels as the cells without a buffer layer with prolonged light soaking. Computer modelling has revealed that a graded band gap buffer layer at the p/i interface containing a slightly acceptor doped defective layer next to the p‐layer improves the initial performance of a‐Si:H p‐i‐n solar cells. The modelling also reveals that the effect of the buffer layer on solar cell performance depends critically on the configuration and composition of the buffer layer. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

“… Graphical representation of simulated and experimental devices. Same set of simulation standards were applied for imitating the reported device performance (a) Light J–V characteristics of different devices under AM1.5 illumination, (b) Spectral response of the investigated devices, (c) Comparison of PCE of experimental devices reported in [7, 11, 36] with their simulated results. Simulated efficiency for device by Munyeme , et al was the same as that of the fabricated one in [36]…”

“…8 c . The experimental work referenced here deals with single junction configuration with layer design such as a‐Si(p)/a‐Si(i)/a‐Si(n) [7], a‐SiC(p)/a‐Si(i)/a‐Si(n) [11], and a‐SiC(p)/a‐Si(i)/a‐Si(n) [36]. Overall, physical device simulation results are in good agreement with the experimental data.…”

“…(a) Light J-V characteristics of different devices under AM1.5 illumination, (b) Spectral response of the investigated devices, (c) Comparison of PCE of experimental devices reported in[7,11,36] with their simulated results. Simulated efficiency for device by Munyeme et al was the same as that of the fabricated one in[36] IET Circuits Devices Syst., 2017, Vol. 11 Iss.…”

Wide bandgap p-type nanocrystalline silicon oxide as window layer for high performance thin-film silicon multi-junction solar cells

“…For cells with p-SiC as p-layer, a thin layer of intrinsic a-SiC:H (4 nm) buffer layer was used at the p/i interface to improve the V oc and FF. In many studies, a buffer layer between the p/i interface was commonly used to improve the solar cell performance [42][43][44]. Here no buffer layer was used in the devices with p-SiO x window layer.…”

Third Generation Photovoltaics

“…The spectral response for cells with and without a buffer layer at the p/i interface in the as deposited state obtained at -1 V bias voltage. Inset: the p-i-n-structure showing the position of the buffer layer (from Munyeme et al 2004).…”