Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

Rani, C. Sheeja Herobin; Roach, R. Solomon; Samuel, T. S. Arun; Lawrence, Simon E.

doi:10.1007/s12633-021-01355-2

Cited by 6 publications

(2 citation statements)

References 21 publications

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“…Figure 9 shows transconductance(gm/Ids) of HD-DMG-US TFET comparision with Conventional-Tunnel FET, Dual Material Gate-Tunnel FET(DMG-US TFET) and HfO2 Spacer Tunnel FET(S-TFET) [27,28]. The devices that turn on at higher voltages (threshold voltages) have low gm/Ids values.…”

Section: Analog Characteristicsmentioning

confidence: 99%

Design and Analysis of Hetero Dielectric Dual Material Gate Underlap Spacer Tunnel Field Effect Transistor

Howldar,

Balaji,

Srinivasa Rao

2023

IJE

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Section: Analog Characteristicsmentioning

confidence: 99%

Design and Analysis of Hetero Dielectric Dual Material Gate Underlap Spacer Tunnel Field Effect Transistor

Howldar,

Balaji,

Srinivasa Rao

2023

IJE

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“…34,35 When making small-scale devices, the silicon dioxide (SiO 2 ) gate insulator should be replaced with a high-k dielectric gate oxide material, such as hafnium oxide, while maintaining appropriate z E-mail: shivaniyadav.ece@gmail.com; rewarisonam@gmail.com ECS Journal of Solid State Science and Technology, 2023 12 127008 oxide thickness (EOT) as a constant. 23 Hetero Dielectric structure in which combinations of low dielectric material together with high dielectric materials are utilised for FETs have been reported in literature to boost ON current 36 and reduce the OFF state leakages. 37,38 Nanometer sized biomolecules are detectable using Gate All Around Field Effect Transistor (GAAFET) based sensors.…”

mentioning

confidence: 99%

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Yadav,

Rewari

2023

ECS J. Solid State Sci. Technol.

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The label free detection of various biomolecules associated with different diseases has been proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric Trench Gate Junctionless Accumulation Mode Gate-All-Around FET (HDTG-JAM-GAAFET). This biosensor employs a silicon cylindrical Gate All Around FET which operates in Junctionless Accumulation Mode (JAM) and has a hetero dielectric layer comprised of SiO2 and HfO2. The cylindrical gate structure’s metal gate is trenched into the Hafnium oxide dielectric layer, which provides the gate with enhanced control over the surface characteristics of the channel. A Trench Gate architecture in a hetero dielectric Gate All Around FET is emulated for the biosensing for the first time. The HDTG-JAM-GAAFET has been compared to Normal Gate JAM Gate-All-Around FET (NG-JAM-GAAFET) biosensors immobilizing a variety of neutral biomolecules and biomolecules having a range of positive and negative charges. The effect of biomolecules on HDTG-JAM-GAAFET biosensor’s output properties, including surface potential, electron concentration, threshold voltage drift (ΔVTH), subthreshold leakage current (IOFF), subthreshold slope (SS), switching ratio (ION/IOFF), ION current sensitivity, transconductance (gm), output conductance (gd), channel resistance (Rch) and intrinsic gain ( A V int ) has been studied. For instance, HDTG-JAM-GAAFET biosensor has drain ON-current sensitivity ( S I ON ) which is 67.68% greater for gelatin biomolecules, 69.4% higher for positive biomolecules, and 8% higher for negative biomolecules bound in the nanogap cavity than that of a Normal Gate JAM Gate-All-Around FET. The proposed device exhibits exceptional performance characteristics and it can effectively identify specific biomolecules to diagnose many diseases, such as breast cancer, lung cancer, and numerous viral infections, using their respective biomarkers.

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Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric

Kumar

Sharma

2022

Appl. Phys. A

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Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

Cited by 6 publications

References 21 publications

Design and Analysis of Hetero Dielectric Dual Material Gate Underlap Spacer Tunnel Field Effect Transistor

Design and Analysis of Hetero Dielectric Dual Material Gate Underlap Spacer Tunnel Field Effect Transistor

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric

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