Performance analysis of GaAsBi/InGaAs heterostructure for III-V multi-junction solar cells

Paulauskas, Tadas; Pačebutas, V.; Geižutis, Andrejus; Kamarauskas, Mindaugas; Drazdys, Mantas; Rudzikas, Matas; Kondrotas, Rokas; Naujokaitis, Arnas; Nevinskas, Ignas; Šebeka, Benjaminas; Strazdienė, Viktorija; Krotkus, A.

doi:10.1016/j.solmat.2022.112013

Cited by 4 publications

(15 citation statements)

References 27 publications

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“…The short-circuit current in a M-J solar cell is limited by the lowest currentgenerating subcell. Here, the current is nearly matched by all subcells and is slightly limited by the bottom GaAsBi subcell [10].…”

Section: Resultsmentioning

confidence: 89%

“…The device is formed with front and back contacts, and the TiO 2 /SiO 2 ARC is deposited on the AlGaAs window layer. The full details regarding its growth, processing, and photovoltaic performance can be found elsewhere in [10]. Notably, the bottom GaAsBi subcell is a novel alloy for M-J solar cell applications.…”

Section: Resultsmentioning

confidence: 99%

“…The dilute bismide offers a much lower latticemismatch with the top two subcells AlGaAs and GaAs, as compared to the standard alternative InGaAs bottom subcell [1,4,17]. Therefore, a thinner and less complicated buffer layer can be employed to incorporate the bottom subcell with high crystalline quality having the desirable 1.0 eV bandgap [18,19].…”

Section: Resultsmentioning

confidence: 99%

“…The reflection losses mainly affect the GaAsBi subcell in this device, rising from 5% at 1.3 eV to 90% at 1.0 eV. The reflection spectrum is provided elsewhere in [10]. Photocurrent amplitudes, normalized to a constant photon number, change only slightly over the GaAs subcell absorption range, and are lower than the photocurrents generated in the bottom GaAsBi subcell.…”

Section: Resultsmentioning

confidence: 99%

“…The growth rate was 0.7-1 µm h −1 . The description of sample S6 growth is described elsewhere in [10].…”

Section: Methodsmentioning

confidence: 99%

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Terahertz photocurrent spectrum analysis of AlGaAs/GaAs/GaAsBi multi-junction solar cells

Krotkus

Nevinskas

Norkus

et al. 2023

J. Phys. D: Appl. Phys.

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Characterizing subcells in two-terminal multi-junction (M-J) solar cells is challenging due to the lack of direct electrical access. This work presents a novel contactless spectral characterization technique for analysing individual subcells. The technique involves probing terahertz (THz) radiation generated by femtosecond laser pulse excitation and varying the exciting wavelength to selectively absorb light in the desired subcell. The registered THz pulse integral is then proportional to the induced photocurrent in that subcell. The THz photocurrent spectroscopy technique is demonstrated on GaAs and AlGaAs single-junction solar cells, as well as on the triple-junction AlGaAs/GaAs/GaAsBi solar cell. The results show that the recently developed GaAsBi-based subcell, with a nominal energy bandgap of 1.0 eV, exhibits improved electron–hole separation efficiency and can enhance energy harvesting by M-J solar cells.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…The growth rate was 0.7-1 µm h −1 . The description of sample S6 growth is described elsewhere in [10].…”

Section: Methodsmentioning

confidence: 99%

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Terahertz photocurrent spectrum analysis of AlGaAs/GaAs/GaAsBi multi-junction solar cells

Krotkus

Nevinskas

Norkus

et al. 2023

J. Phys. D: Appl. Phys.

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InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property

Yang,

Ma,

Shi

et al. 2024

Materials Science in Semiconductor Processing

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Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber

et al. 2023

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Group III–V semiconductor multi-junction solar cells are widely used in concentrated-sun and space photovoltaic applications due to their unsurpassed power conversion efficiency and radiation hardness. To further increase the efficiency, new device architectures rely on better bandgap combinations over the mature GaInP/InGaAs/Ge technology, with Ge preferably replaced by a 1.0 eV subcell. Herein, we present a thin-film triple-junction solar cell AlGaAs/GaAs/GaAsBi with 1.0 eV dilute bismide. A compositionally step-graded InGaAs buffer layer is used to integrate high crystalline quality GaAsBi absorber. The solar cells, grown by molecular-beam epitaxy, achieve 19.1% efficiency at AM1.5G spectrum, 2.51 V open-circuit voltage, and 9.86 mA/cm2 short-circuit current density. Device analysis identifies several routes to significantly improve the performance of the GaAsBi subcell and of the overall solar cell. This study is the first to report on multi-junctions incorporating GaAsBi and is an addition to the research on the use of bismuth-containing III–V alloys in photonic device applications.

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Performance analysis of GaAsBi/InGaAs heterostructure for III-V multi-junction solar cells

Cited by 4 publications

References 27 publications

Terahertz photocurrent spectrum analysis of AlGaAs/GaAs/GaAsBi multi-junction solar cells

Terahertz photocurrent spectrum analysis of AlGaAs/GaAs/GaAsBi multi-junction solar cells

InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property

Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber

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