Performance analysis of GaAs based solar cells under gamma irradiation

Papěž, Nikola; Gajdoš, A; Dallaev, Rashid; Sobola, Dinara; Sedlák, Petr; Motuz, Rastislav; Nebojsa, Alois; Grmela, Lubomír

doi:10.1016/j.apsusc.2020.145329

Cited by 33 publications

(27 citation statements)

References 26 publications

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“…The fact of element displacement, as well as the anisotropic character, was shown and confirmed by SIMS. These are the results from one of a set of several years of researches [ 3 , 34 ] of solar cells of the same type, where it can be confirmed that a similar phenomenon was also observed after strong irradiation of gamma rays.…”

Section: Discussionsupporting

confidence: 61%

“…The effects of radiation exposure of optical elements, such as GaAs solar cells, represent an essential parameter for the evaluation of stability and efficiency. We have already reported the degradation of GaAs solar cells under temperature and gamma radiation [ 1 , 2 , 3 ]. Although GaAs photovoltaic cells are smaller in the field of solar cells, it can be argued that they dominate in terms of special applications such as stability and resistance to various effects of electromagnetic radiation.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination

et al. 2021

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This work is dedicated to the description of the degradation of GaAs solar cells under continuous laser irradiation. Constant and strong exposure of the solar cell was performed over two months. Time-dependent electrical characteristics are presented. The structure of the solar cells was studied at the first and last stages of degradation test. The data from Raman spectroscopy, reflectometry, and secondary ion mass spectrometry confirm displacement of titanium and aluminum atoms. X-ray photoelectron spectroscopy showed a slight redistribution of oxygen bonds in the anti-corrosion coating.

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Section: Discussionsupporting

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination

et al. 2021

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“…Solar cells are rapidly improving [1,2]. Recently, perovskite solar cells (PSCs) have drawn increasing attention due to their high power conversion efficiency (PCE), low cost, and facile preparation process [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of Optimization of TiO2 Electron Transport Layer on Performance of Perovskite Solar Cells with Rough FTO Substrates

et al. 2020

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The film quality of the electron transport layer (ETL) plays an important role in improving the performance of perovskite solar cells (PSCs). In order to reduce the effect of rough fluorine-doped SnO2 (FTO)substrate on the film quality of the TiO2 ETL, multiple cycles of spin-coating were employed to realize optimized TiO2 film and improve the performance of PSCs with rough FTO. The results show that TiO2 ETL was optimized most effectively using two spin-coating cycles, obtaining the best performance of PSCs with rough FTO. The carbon electrode-based PSCs were then demonstrated. Our work discusses the feasibility of low-quality rough FTO for the fabrication of PSCs and photodetectors to reduce costs.

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“…Al x Ga 1− x As is a good example of such graded band gap systems [ 22 , 23 ] in which the composition of the system gradually changes from that of a small-band-gap material, such as GaAs (1.441 eV), at one end to that of a large-band-gap material, such as AlAs (2.12 eV), at the other. These structures have stable characteristics and are widely used in photovoltaics [ 24 ]. Electrons and holes in the system experience different electric forces due to the quasi-electric field induced by the graded band gap, so the transport properties of the two types of carriers can be tuned independently [ 22 , 23 ].…”

Section: Methodsmentioning

confidence: 99%

“…The band gap of ZnO can be controlled to have a smaller or larger band gap by replacing the Zn element with other elements such as Cd or Mg [ 26 , 27 ]. Most previous studies on ZnO-based systems are related to the optoelectronic properties of the materials due to the large exciton binding energy of ZnO [ 24 ]. Here, compositionally graded film, g -Al:MgZnO, is deposited to fabricate a memristive neuromorphic device by modifying the electrical transport properties.…”

Section: Methodsmentioning

confidence: 99%

A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films

Yoon

2020

Materials

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Energy-efficient computing paradigms beyond conventional von-Neumann architecture, such as neuromorphic computing, require novel devices that enable information storage at nanoscale in an analogue way and in-memory computing. Memristive devices with long-/short-term synaptic plasticity are expected to provide a more capable neuromorphic system compared to traditional Si-based complementary metal-oxide-semiconductor circuits. Here, compositionally graded oxide films of Al-doped MgxZn1−xO (g-Al:MgZnO) are studied to fabricate a memristive device, in which the composition of the film changes continuously through the film thickness. Compositional grading in the films should give rise to asymmetry of Schottky barrier heights at the film-electrode interfaces. The g-Al:MgZnO films are grown by using aerosol-assisted chemical vapor deposition. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the films show self-rectifying memristive behaviors which are dependent on maximum applied voltage and repeated application of electrical pulses. Endurance and retention performance tests of the device show stable bipolar resistance switching (BRS) with a short-term memory effect. The short-term memory effects are ascribed to the thermally activated release of the trapped electrons near/at the g-Al:MgZnO film-electrode interface of the device. The volatile resistive switching can be used as a potential selector device in a crossbar memory array and a short-term synapse in neuromorphic computing.

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Performance analysis of GaAs based solar cells under gamma irradiation

Cited by 33 publications

References 26 publications

Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination

Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination

Effect of Optimization of TiO2 Electron Transport Layer on Performance of Perovskite Solar Cells with Rough FTO Substrates

A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films

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