Abstract:This paper presents an efficacy of an FD SOI MOSFET structure in suppressing short channel effects is investigated through 2-Dimenional simulation on ATLAS Silvaco. The electrical comparison between Bulk MOSFET, FD-SOI MOSFET and FD-SOI MOSFET using high-k gate dielectric at 45nm technology has been carried out. The structures have been designed and study of threshold voltage, sub threshold slope, drain current (Ion), leakage current (Ioff), Ion/Ioff, transconductance has been done. The features offered by the… Show more
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