2020 International Conference on Smart Electronics and Communication (ICOSEC) 2020
DOI: 10.1109/icosec49089.2020.9215341
|View full text |Cite
|
Sign up to set email alerts
|

Performance analysis: D-Latch modules designed using 18nm FinFET Technology

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
8
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7
3

Relationship

0
10

Authors

Journals

citations
Cited by 33 publications
(8 citation statements)
references
References 15 publications
0
8
0
Order By: Relevance
“…The presence of multi-gates can better withstand the short channel effects, namely drain-induced barrier lowering, threshold voltage roll off (DV T ) and subthreshold swing SS ( ) [5,6]. Due to these advantages, FinFET is used to design the D-latch module [7].…”
Section: Introductionmentioning
confidence: 99%
“…The presence of multi-gates can better withstand the short channel effects, namely drain-induced barrier lowering, threshold voltage roll off (DV T ) and subthreshold swing SS ( ) [5,6]. Due to these advantages, FinFET is used to design the D-latch module [7].…”
Section: Introductionmentioning
confidence: 99%
“…These filters provide the linear model, inverse model of the unknown system and predict the present value of the random signal. [16][17][18][19][20][21][22][23][24][25] They can be designed as FIR or IIR filters. The adaptive FIR is more preferred because of its stability and easy updating of the filter coefficients.…”
Section: Introductionmentioning
confidence: 99%
“…In IIR filter, the output depends on past inputs, present inputs and previous outputs. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The transfer function can be written as…”
Section: Introductionmentioning
confidence: 99%