2000
DOI: 10.1063/1.125626
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Perforated tips for high-resolution in-plane magnetic force microscopy

Abstract: We describe a technique to modify batch-fabricated magnetic force microscopy (MFM) tips to allow high resolution imaging of the in-plane components of stray field. A hole with a diameter as small as 20 nm was milled through the magnetic layer at the apex of each tip using a focused ion beam. The tips were magnetized in the direction parallel to the sample plane. The hole at the apex forms a small pole gap, and the MFM signal arises from interaction of the stray field leakage from this gap with magnetic charge … Show more

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Cited by 71 publications
(27 citation statements)
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“…Koblishka et al [21] and S. Huang et al [22] milled standard MFM tips and prepared high-aspect-ratio tips using focused ion beam (FIB). L. Folks et al [23] applied the FIB milling to increase the MFM lateral resolution and magnetic sensitivity. Recently, F. Wolny [24] fabricated MFM tip by filling CNT with ferromagnetic iron.…”
Section: Introductionmentioning
confidence: 99%
“…Koblishka et al [21] and S. Huang et al [22] milled standard MFM tips and prepared high-aspect-ratio tips using focused ion beam (FIB). L. Folks et al [23] applied the FIB milling to increase the MFM lateral resolution and magnetic sensitivity. Recently, F. Wolny [24] fabricated MFM tip by filling CNT with ferromagnetic iron.…”
Section: Introductionmentioning
confidence: 99%
“…Focused ion beam (FIB) milling has been used previously to realize this MFM-tip modification. Folks et al [4] made a hole as small as 20 nm at the apex of a CoCr tip to improve the resolution of in-plane components of the stray field and to identify a 50-nm transition. Liu et al [5] sharpened the tip using an FIB and then coated a 30-nm exchanged coupled antiferromagnet-ferromagnet multilayer on the tip.…”
mentioning
confidence: 99%
“…It is used in the development of nanoelectronics, 1 nanoscale probe recording, 2 and magnetoelectronics, 3 or for high resolution modification of MFM tips. 4 We have recently demonstrated the ability of the FIB technique to fabricate 50 nm wide Hall effect sensors. 5 The main advantage of FIB is that it is a very rapid, dry technique, as compared to electron beam lithography for instance.…”
mentioning
confidence: 99%