Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications

Mišeikis, Vaidotas; Xiang, Shao-Hua; Roddaro, Stefano; Heun, S.; Coletti, Camilla

doi:10.1007/978-3-319-58134-7_8

Cited by 6 publications

(2 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case of CVD grown graphene, the original substrate is the metallic substrate on which the graphene was grown. Removal of this substrate using chemical etchants exposes graphene to metal ions, which can potentially dope the graphene, changing its electronic properties [29]. One study measured a residual metallic contamination of greater than 10 13 atoms•cm −2 , regardless of the extensiveness of the post-etching cleaning procedure [22].…”

Section: Issues Arising In Graphene Transfermentioning

confidence: 99%

Graphene Transfer: A Physical Perspective

Langston

Whitener

2021

Nanomaterials

View full text Add to dashboard Cite

Graphene, synthesized either epitaxially on silicon carbide or via chemical vapor deposition (CVD) on a transition metal, is gathering an increasing amount of interest from industrial and commercial ventures due to its remarkable electronic, mechanical, and thermal properties, as well as the ease with which it can be incorporated into devices. To exploit these superlative properties, it is generally necessary to transfer graphene from its conductive growth substrate to a more appropriate target substrate. In this review, we analyze the literature describing graphene transfer methods developed over the last decade. We present a simple physical model of the adhesion of graphene to its substrate, and we use this model to organize the various graphene transfer techniques by how they tackle the problem of modulating the adhesion energy between graphene and its substrate. We consider the challenges inherent in both delamination of graphene from its original substrate as well as relamination of graphene onto its target substrate, and we show how our simple model can rationalize various transfer strategies to mitigate these challenges and overcome the introduction of impurities and defects into the graphene. Our analysis of graphene transfer strategies concludes with a suggestion of possible future directions for the field.

show abstract

Section: Issues Arising In Graphene Transfermentioning

confidence: 99%

Graphene Transfer: A Physical Perspective

Langston

Whitener

2021

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…It is worth noting that both electrical and thermal contact between graphene and the directly deposited metallic thin film are much better than those of the conventional method by transferring graphene onto the fabricated electrodes. No residual air bubbles, contaminations or wrinkles were trapped between the metal and graphene [33][34][35][36][37] . In the fabrication process, the SiO 2 layer was removed by using a buffered hydrofluoric acid (BHF) through a micrometer sized window opened in the polymer resist layer.…”

Section: Synthesis Of Fluorinated Graphenementioning

confidence: 99%

Ultra-strong stability of double-sided fluorinated monolayer graphene and its electrical property characterization

Wang

Narasaki

Zhang

et al. 2020

Sci Rep

View full text Add to dashboard Cite

Fluorinated graphene has a tunable band gap that is useful in making flexible graphene electronics. But the carbon–fluorine (C–F) bonds in fluorinated graphene can be easily broken by increased temperature or electron beam irradiation. Here, we demonstrate that the stability of fluorinated graphene is mainly determined by its C–F configuration. The double-sided fluorinated graphene has a much stronger stability than the single-sided fluorinated graphene under the same irradiation dose. Density functional theory calculations show that the configuration of double-sided fluorinated graphene has a negative and low formation energy, indicating to be an energetically stable structure. On the contrary, the formation energy of single-sided fluorinated graphene is positive, leading to an unstable C–F bonding that is easily broken by the irradiation. Our findings make a new step towards a more stable and efficient design of graphene electronic devices.

show abstract

Quasistatic Equilibrium Chemical Vapor Deposition of Graphene

Ullah

Yang

et al. 2021

Adv Materials Inter

View full text Add to dashboard Cite

This study reviews the majorly used chemical vapor deposition (CVD) with a focus on confined reaction configurations in which quasistatic equilibrium conditions are obtained for the fabrication of graphene with large size and high quality through controlled nucleation density, feedstock flux, and growth rates. The confinement configurations can also be used to tune the thickness, domain size and shape, and stacking order of the synthetic graphene. The confined CVD reaction configurations discussed include enclosure systems, inner‐tube setups, sandwiched substrates, as well as other types of configurations. The advantages and limitations of the different confinement configurations are presented, along ways to optimize the operational parameters for them.

show abstract

Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications

Cited by 6 publications

References 21 publications

Graphene Transfer: A Physical Perspective

Graphene Transfer: A Physical Perspective

Ultra-strong stability of double-sided fluorinated monolayer graphene and its electrical property characterization

Quasistatic Equilibrium Chemical Vapor Deposition of Graphene

Contact Info

Product

Resources

About