We demonstrate room-temperature strong-coupling between a mid-infrared (λ=9.9 µm) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k=0 where potentially polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states andsimultaneously -to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the concept of strong critical coupling is highlighted.Light emitting devices based on microcavity polaritons have experienced a tremendous development in the last two decades with the successful demonstration of electroluminescent diodes and optically pumped "bosonic lasers" operating at near-infrared wavelengths 1,2 . The extension of such devices to mid-infrared (mid-IR) and Terahertz (THz) wavelengths (λ > 10µm) has been recently explored, taking advantage of the design flexibility offered by intersubband (ISB) transitions in semiconductor quantum wells. The strong coupling between an ISB transition (or more precisely an ISB plasmon 3 ) and a microcavity photonic mode was first demonstrated in the mid-IR 4 and then in the THz range 5 . Devices based on microcavity ISB polaritons hold great potential since in the strong-coupling regime a periodic energy exchange between the light and matter degrees of freedom takes place on an ultrafast time scale (the Rabi oscillation time). On one hand, ISB polaritons can in principle exhibit radiatiave decay times faster than a bare ISB transition. This effect could yield more efficient electroluminescent devices at such wavelengths 6,7 . On the other hand, due to their bosonic nature, ISB polaritons are subject to final state stimulation, as it is also the case for their excitonic counterparts, and they can potentially lead to the demonstration of bosonic mid-IR or THz lasers 8-10 , which would not rely on population inversion. Quantum cascade structures embedded in microcavities have been used to demonstrate electrically pumped light emitting polaritonic devices in the mid-IR 11 . Furthermore, phonon-assisted polariton scattering processes have been observed 12 . This constitutes an encouraging step towards the development of efficient electroluminescent polaritonic devices, since it is possible to rely on a proven scattering process.However, in the polaritonic light emitting devices (LED) demonstrated to date a key parameter is missing. It is not possible with a total internal reflection cavity geometry to obtain an energy minimum at very low in-plane wavevector (k ) values, where the density of states...