2001
DOI: 10.1063/1.1357809
|View full text |Cite
|
Sign up to set email alerts
|

Percolation transition of thermoelectric properties in PbTe thin films

Abstract: Extrema were observed in the film thickness d dependence of various thermoelectric parameters (Seebeck coefficient S, electrical conductivity σ, Hall coefficient RH, charge carrier mobility μ, and power factor P) of epitaxial PbTe/(001) KCl thin films prepared by thermal evaporation in vacuum and protected from oxidation by an EuS layer. We attribute the observed extrema in properties and the high values of μ and P at d≈50 nm to the percolation transition from an island-like to a continuous film and to the sel… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

1
19
0

Year Published

2003
2003
2015
2015

Publication Types

Select...
4
2
2

Relationship

0
8

Authors

Journals

citations
Cited by 34 publications
(20 citation statements)
references
References 26 publications
1
19
0
Order By: Relevance
“…Earlier, in a number of IV-VIbased solutions, we detected anomalies of properties in the range 0.5-1.5 mol.% of IA [13][14][15][16][17][18] and interpreted them as a manifestation of percolation type phase transitions occurring under the transition from the impurity discontinuum to the impurity continuum [19]. That is why the first maximum in the V(x) and S(x) dependences can be interpreted as the attainment of the percolation threshold in the impurity subsystem of the crystal.…”
Section: Resultsmentioning
confidence: 99%
“…Earlier, in a number of IV-VIbased solutions, we detected anomalies of properties in the range 0.5-1.5 mol.% of IA [13][14][15][16][17][18] and interpreted them as a manifestation of percolation type phase transitions occurring under the transition from the impurity discontinuum to the impurity continuum [19]. That is why the first maximum in the V(x) and S(x) dependences can be interpreted as the attainment of the percolation threshold in the impurity subsystem of the crystal.…”
Section: Resultsmentioning
confidence: 99%
“…Note that analysing d-dependences for thermoelectric parameters of nanostructures, one should take into consideration the self-organization processes that determine its maxima [11,12,16]. These approaches to explanation of experimental data are vindicated by coincidence of the point extrema in thickness dependences of independently measured Hall RB H B and Seebeck coefficients S (Figs 2 and 3).…”
Section: Discussionmentioning
confidence: 99%
“…The improvement of the figure of merit is caused by the fact, that very thin layer present a two dimensional system [1]. Recently, very interesting results were obtained on thin PbTe films prepared by thermal evaporation in vacuum [2] where great improvement of properties was observed for layers of thickness close to 50 nm.Thin Bi 2 Te 3 films were earlier prepared by several methods: sputter deposition [3 -4], co-evaporation of the elements [5], flash evaporation [6-9], molecular beam epitaxy [10,11] and pulsed laser deposition [12]. The pulsed laser technique was found to be suitable for preparation of layers at room temperature with the stoichiometry close to the bulk Bi 2 Te 3 crystal [12].…”
mentioning
confidence: 99%
“…A high power pulsed laser radiation (1) is used as an external energy source to vaporise materials of target (5) and to deposit thin films. A set of optical components is used to focus the laser beam to the target surface (2,3). After the laser pulse irradiation the temperature rises very rapidly (10…”
mentioning
confidence: 99%