Percolation effects in the capacitive properties of metal-oxide varistors in the range of high voltage

Тонкошкур, А. С.; Gomilko, Igor; Lyashkov, A. Yu.

doi:10.1142/s2010135x14500131

Cited by 3 publications

(4 citation statements)

References 21 publications

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“…The value Ã=a for studied ceramic varistor was $ 5. This value corresponds to Ã $ 0.05 mm if one takes into account that a % 10 m. This estimation is in reasonable agreement with the data 64 and the estimation Ã $ 0:4 mm 34 obtained at lower electric fields (where Ã is greater) by the direct measurement of the dependence of resistance on thickness of a ceramic varistor. Later on this experimental fact was confirmed.…”

Section: Electric Inhomogeneity In Varistor Ceramicssupporting

confidence: 90%

Percolation effects in dc degradation ofZnOvaristors

2015

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For quantitative estimation of the degree of electrical disorder (electrical inhomogeneity) in ZnO varistor ceramics caused by a variation in the barrier height at different grain boundaries in a sample, the comparison of threshold electric fields (onsets of highly nonlinear current-voltage characteristics) in ceramics and single grain boundary (GB) is suggested and approved. At dc degradation similar behavior of the current-voltage characteristics of ZnO varistor ceramics and single GB is observed. The percolation model of Shklovskii-De Gennes is applicable for the description of a disorder in ZnO varistor ceramics. The degree of the disorder in ZnO varistor ceramics is not dependent on the duration of dc degradation at least at degradation time below 60 h. At voltages close to the onset of a highly nonlinear region of current-voltage characteristic the correlation radius of infinite cluster is $ 5 times greater than the average grain size.

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Section: Electric Inhomogeneity In Varistor Ceramicssupporting

confidence: 90%

Percolation effects in dc degradation ofZnOvaristors

2015

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“…The expression for the variable component of the electric dipole moment and the value B Ã does not change in comparison with the case of absence of the dc electric field. 29 For the range under consideration of the frequency, when recharging of surface electron states can be neglected, the expression is represented in the form (9).…”

Section: Basic Equations Of the Modelmentioning

confidence: 99%

“…The first of these fields is observed in the infra-low frequencies, and the second is observed in the GHz range. 29 For investigation of capacitance-voltage characteristics, the measurement scheme described in work 7,9 was used which allows one to measure capacitance in a wide range of direct shifting voltage (0-700 V) and frequencies of alternating current (20 Hz-50 kHz).…”

Section: Zinc Oxide Varistor Ceramicsmentioning

confidence: 99%

“…In this region, capacitance of structures decreases with increasing applied dc voltage. [6][7][8][9][10] This effect is used to determine the height of the intergranular potential barrier ' 0S and donor concentration in the bulk of the semiconductor ZnO crystallites N d of the metal oxide varistor ceramics when studying the influence of impurities (additives), structural defects, which arise during the making and the degradation process. [11][12][13][14][15] It is known that the method of the capacitance-voltage characteristics is used to evaluate the packing density of varistor ceramics.…”

Section: Introductionmentioning

confidence: 99%

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High-frequency capacitance-voltage characteristics of the heterogeneous structure based on the model of spherical semiconductor particles in a dielectric

Тонкошкур

Иванченко

2016

J. Adv. Dielect.

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The dependence of the parameters of the capacitance effect in heterogeneous dispersed two-component structures based on semiconductors from the bulk fraction of the semiconductor component is modeled. The used method for determining the changes of the energy bands bending on the surface of the spherical semiconductor particle by applying dc electric field allowed to calculate the changes of the dipole moment and effective (taking into account the polarization of the free charge) dielectric constant of this semiconductor particle. This result allowed to use the known models of the dielectric constant of two-component structures for the description of the capacitance field effect in the heterogeneous structures. The relations allowing to estimate the value of the bulk donor concentration in the semiconductor component of the matrix of the heterogeneous system and the statistical mixture have been obtained. The approbation of the obtained calculation relations to evaluate the donor concentration in the ZnO grains of zinc oxide varistor ceramics leads to the correct values that are consistent with estimates of other methods and models. It is established that the sensitivity of the relative dielectric constant to the applied dc electric field is dependent on the bulk fraction of the semiconductor particles in the heterogeneous structures. The bulk fraction of the semiconductor particles significantly affects on the dielectric constant beginning with the values from $ 0:8 for matrix systems and $ 0:33 for statistical mixtures.

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