Perchlorate-Induced Doping of Electrodeposited ZnO Films for Optoelectronic Applications

Abstract

The aim of this work is to produce via a low cost technique a thin film of ZnO showing optoelectronics properties similar to those one could obtain through various vacuum techniques. In order to achieve such goal, electrodeposition appears to be one of the most interesting approaches. Employing such technique in a Cl-containing bath, a high doping of the ZnO layer can be readily achieved through the substitution of a chloride ion for an oxygen atom in the ZnO lattice: the obtained optoelectronic properties are comparable to the ones of vacuum deposited layer. However, the introduction of chloride was found to be difficult to control, leading to a high concentration of inactive chloride in the ZnO lattice and, as a result, lower electrical performances of the material. In this study, the limitation of chloride doping is evidenced and explained considering the formation of chloride rich compounds. Moreover, ab initio calculations demonstrate that incorporation of perchlorate ions in the ZnO lattice at an oxygen site is possible and highlight the efficient doping character of this substitution. Then the influence of the perchlorate ions on the morphological, structural, and optoelectronic properties of electrodeposited ZnO thin films have been experimentally explored. In particular, this study demonstrates that the use of perchlorate as chlorine source prevents the formation of undesirable chlorine rich phases and to reach high doping level and mobility up to 1.7 × 10 20 cm −3 and 19 cm 2 •V −1 •s −1 , respectively.

Resonant Raman scattering based approaches for the quantitative assessment of nanometric ZnMgO layers in high efficiency chalcogenide solar cells

“…Some weaker contributions at lower wavenumber of the fundamental and higher orders of the LO peak can also be seen. These are attributed to multi-phonon peaks, which have also been previously observed in doped ZnO layers 13, 27 . Their appearance is likely related to the presence of lattice defects 27 .…”

“…These are attributed to multi-phonon peaks, which have also been previously observed in doped ZnO layers 13, 27 . Their appearance is likely related to the presence of lattice defects 27 . The LO peaks are also characterized by an asymmetric shape towards the lower frequency side, and this asymmetry increases with the Mg content in the alloy.…”

Non plasmonic semiconductor quantum SERS probe as a pathway for in vitro cancer detection

“…Stacking faults and defects were evident from the lattice pattern and irregular edges of the crystals, respectively. The lattice spacing “d” indicated the presence of wurtzite as well as zinc blende phases of ZnO 38 . The lattice spacing “d” also revealed the presence of zinc crystals and hybrid crystals with wurtzite and zinc blende phases.…”

Structure Dependent Product Selectivity for CO2 Electroreduction on ZnO Derived Catalysts

“…For instance, it has been reported that ClO 4 À ions can be adsorbed on the surface of ZnO, and one Cl would substitute an oxygen atom during the in situ electroreduction of the ZnO. [30] This might explain why this anion substitution effect has not been observed for KHCO 3 as a strong interaction between ZnO and the HCO 3 À is not envisaged. [31] Electrochemical syngas and CO production…”