Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3–5 µm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3–5 µm)

“…The study of the temperature dependence of the PL intensity of GaInAsPSb has shown that for these solid solutions grown on GaSb substrates, the integral intensity of the PL decreases by two orders of magnitude with the increase of temperature from 4 to 300 K (in good agreement with earlier works [8,18]), while in the case of InAs substrates such a decrease is only 20-fold (figure 6). We believe this is for the following two reasons:…”

“…An important advantage of pentanary solid solutions GaInAsPSb as well as AlGaInAsSb in comparison with their quaternary counterparts is the availability of additional 'degree of freedom' allowing manipulation of any compositiondependent property of the material (e.g. refractive index or the spin-orbital splitting value) at fixed lattice-constant and bandgap values, or to select compositions of a solid solution with optimal combination of several physical parameters [8]. In a number of cases, the third degree of freedom in pentanary solid solutions can be used for development of heterostructures with layers lattice-matched by linear coefficient of thermal expansion (LCTE), which is of high importance for devices with a broad operating temperature range.…”