Abstract:We review recent works on 1) an isotope effect of penetration of Hydrogen(H) and Deuterium(D) into Silicon through Si/SiO 2 interface and 2) H effects for Si nanostructures, as well as summary of hydrogen states in crystal Si. In particular, a new filtering effect of H and D isotope atoms was found for penetration process into crystal silicon (Si) through the interface between a Si and SiO 2 native oxide layer. More H atoms are introduced into Si than D for mixing gases. This phenomenon can be tentatively expl… Show more
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