Pellicle effect on OPC modeling

Luo, Boren; Chang, C. C.; Wang, W. L.; Huang, Wen‐Shih; Wu, Timothy; Lai, Chien-Wen; Liu, R. G.; Lin, H. T.; Chen, K. S.; Ku, Y.H.

doi:10.1117/12.775419

Cited by 2 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2,3 As far as experimental wafer data is concerned, there are only a few examples and, to our knowledge, none are at 1.35 NA. The paper by Luo et al 4 contains experimental and modeling data at 1.2 NA showing the pellicle effect of several nm for lines through pitch with varying CDs ranging from 55 to 65 nm. 1932-5150/2011/$25.00 C 2011 SPIE For the effect of a pellicle on the CDU, we refer to an early evidence 5 of CDU increase due to the pellicle presence for 180 nm wide resist lines.…”

Section: Introductionmentioning

confidence: 99%

“…By verifying the predictive power of the simulations based on measured pellicle characteristics, we also want to show that the pellicle effects can be accurately modeled and can thus be taken into account during process optimization by pellicle-aware optical proximity correction (OPC) 3,4 and/or (variable) local dose fingerprint application. As the lifetime of a pellicle is much shorter than that of the reticle, replacing the pellicle may lead to different intra-field properties.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Pellicle contribution to optical proximity and critical dimension uniformity for 1.35 numerical aperture immersion ArF lithography

Look

Bekaert

Laenens

et al. 2011

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

Pellicles are mounted on the masks used in ArF lithography for integrated circuit manufacturing to ensure defect-free printing. The pellicle, a thin transparent polymer film, protects the reticle from dust. But, as the light transmittance through the pellicle has an angular dependency, the pellicle also acts as an apodization filter. In the current work, we present both experimental and simulation results at 1.35 numerical aperture immersion ArF lithography showing the influence of two types of pellicles on proximity and intra-die critical dimension uniformity (CDU). To do so, we mounted and dismounted the different pellicle types on one and the same mask. The considered structures on wafer are compatible with the 32-nm logic node for poly and metal. For the standard ArF pellicle (thickness 830 nm), we experimentally observe a distinct effect of several nm due to the pellicle presence on both the proximity and the intra-die CDU. For the more advanced pellicle (thickness 280 nm), no signature of the pellicle on proximity or CDU could be found. By modeling the pellicle's optical properties as a Jones Pupil, we are able to simulate the pellicle effects with good accuracy. These results indicate that for the 32-nm node, it is recommended to take the pellicle properties into account in the optical proximity correction calculation when using a standard pellicle. In addition, simulations also indicate that a local dose correction can compensate to a large extent for the intra-die pellicle effect. When using the more advanced thin pellicle (280 nm), no such corrections are needed. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%