Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M.; Nemeth, William; Wang, Qi; Duin, Adri C. T. van; Kim, Taek Soo; Zheng, Xiaolin

doi:10.1038/srep02917

Cited by 62 publications

(66 citation statements)

References 29 publications

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“…These observations may indicate partial delamination, i.e., buckling, of the as-deposited Ni film due to compressive stress in addition to local void formation. The interfacial fracture energy for Ni/SiO 2 is higher than that for Au/SiO 2 (1.37 J/m 2 vs. 0.39 J/m 2, respectively [33,34]), which is consistent with this interpretation.…”

Section: Void Nucleationsupporting

confidence: 85%

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Cross-sectional characterization of the dewetting of a Au/Ni bilayer film

et al. 2017

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The solid state dewetting of Au/Ni bilayer films was investigated by cross-sectional transmission electron microscopy techniques, including energy-dispersive X-ray spectroscopy, electron energy-loss spectroscopy and precession electron diffraction. After annealing under high vacuum conditions the early stage of film agglomeration revealed significant changes in film morphology and chemical distribution. Both Au and Ni showed texturing. Despite the initial deposition sequence of the as-deposited Au/Ni/SiO/Si interface structure, the majority of the metal/SiO interface was Au/SiO after annealing at 675°C for 1h. Void nucleation was predominantly observed at Au/Ni/SiO triple junctions, rather than grain boundary grooving at free surface of the metal film. Detailed cross-sectional characterization reveals that the Au/Ni interface in addition to small amounts of metal alloying strongly affects film break-up and agglomeration kinetics. The formation of Au/SiO interface sections is found to be energetically preferred over Ni/SiO due to compressive stress in the as-deposited Ni layer. Void nucleation is observed at the film/substrate interface, while the formation of voids at Ni/Au phase boundaries inside the metal film is caused by the Kirkendall effect.

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Section: Void Nucleationsupporting

confidence: 85%

“…The work of adhesion W adhesive for Ni and Au on SiO 2 , and the surface energies  for Ni, Au and SiO 2 were taken from references [33][34][35][36][37][38] and are listed in [36,37] (see Table 1). In addition, it must be noted that the values for the work of adhesion extracted from reference 34…”

Section: Film Morphology At the Early Stages Of Dewettingmentioning

confidence: 99%

Cross-sectional characterization of the dewetting of a Au/Ni bilayer film

et al. 2017

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“…The replicating nickel layer can reach any desired thicknesses with electrochemical deposition. Due to water-assisted subcritical debonding between nickel and native oxide on the silicon wafer, [25][26][27] the nickel layer with nanopyramid arrays can be readily peeled off from the silicon master template. The facets of the resulting nickel nanopyramids are atomically smooth and free of contamination (Figure 2 …”

Section: Doi: 101002/adma201501686mentioning

confidence: 99%

Large‐Scale Nanophotonic Solar Selective Absorbers for High‐Efficiency Solar Thermal Energy Conversion

et al. 2015

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“…Several flexible diode and transistor structures with GHz operation range have been demonstrated based on silicon. The suggested fabrication processes for these devices include modifying silicon wafers into ribbons or thinning them until they are flexible, using peel-and-stick, lift-off or transfer printing techniques, depositing silicon nanomembranes, or solution processing of silanes followed by annealing [8,9,23,[34][35][36][37][38][39][40]. Besides silicon, other materials such as ZnO, Ge and indium-gallium-zinc-oxide have also been used for high frequency (HF) or UHF devices [41][42][43].…”

Section: Motivation and Goalmentioning

confidence: 99%

Addressability and GHz Operation in Flexible Electronics

Sani

2016

Linköping Studies in Science and Technology. Dissertations

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The first principle is that you must not fool yourself and you are the easiest person to fool. -Richard FeynmanThe discovery of conductive polymers in 1977 opened up a whole new path for flexible electronics. Conducting polymers and organic semiconductors are carbon rich compounds that are able to conduct charges while flexed and are compatible with low-cost and large-scale processes including printing and coating techniques. The conducting polymer has aided the rapidly expanding field of flexible electronics, leading to many new applications such as electronic skin, RFID tags, smart labels, flexible displays, implantable medical devices, and flexible sensors.However, there are several remaining challenges in the production and implementation of flexible electronic materials and devices. The conductivity of organic conductors and semiconductors is still orders of magnitude lower compared to their inorganic counterparts. In addition, non-flexible inorganic semiconductors still remain the materials of choice for high frequency applications; since the charge carrier mobility and thus operational speed of the organic materials are limited. Therefore, there remains a high demand to combine the high frequency operation of inorganic semiconductors with the flexible fabrication methods of organic systems for future electronics.In addition to the challenges in the choice of materials in flexible electronics, the upscaling of the flexible devices and implementing them in circuits can also be complicated. Lack of non-linearity is an issue that arises when flexible devices with linear behavior need to be incorporated in an array or matrix form. Non-linearity is important for applications such as displays and memory arrays, where the devices are arranged as matrix cells addressed by their row and column number. If the behavior of cells in the matrix is linear, addressing each cell affects the adjacent cells. Therefore, inducing non-linearity and, consequently, addressability in such linear devices is the first step before scaling up into matrix schemes.In this work, non-linear organic/inorganic hybrid devices are produced to overcome the limitations mentioned above and leverage the advantages of both organic and inorganic materials. Two novel methods are developed to incorporate non-flexible inorganic semiconductors into ultra-high frequency (UHF) flexible devices. In the first method, Si is ground into a powder with micrometer-sized particles and printed through standard screen printing. For the first time, allprinted flexible diodes operating in the GHz range are produced. The energy harvesting application of the printed diodes is demonstrated in a flexible circuit coupling an antenna and the display to the diode.A second and simpler room-temperature method based on lamination was later developed, which further improves device performance and operational frequency. Here, a flexible semiconducting composite film consisting of Si microparticles, glycerol, and nano-fibrillated cellulose is produced and used as the semiconduct...

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Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

Cited by 62 publications

References 29 publications

Cross-sectional characterization of the dewetting of a Au/Ni bilayer film

Cross-sectional characterization of the dewetting of a Au/Ni bilayer film

Large‐Scale Nanophotonic Solar Selective Absorbers for High‐Efficiency Solar Thermal Energy Conversion

Addressability and GHz Operation in Flexible Electronics

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