2015
DOI: 10.1088/0960-1317/26/2/025004
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PECVD silicon-rich nitride and low stress nitride films mechanical characterization using membrane point load deflection

Abstract: An analysis of the mechanical properties of plasma enhanced chemical vapor (PECVD) silicon nitrides is presented, using micro fabricated silicon nitride membranes under point load deflection. The membranes are made of PECVD silicon-rich nitride and low stress nitride films. The mechanical performance of the bended membranes is examined both with analytical models and finite element simulation in order to extract the elastic modulus and residual stress values. The elastic modulus of low stress silicon nitride i… Show more

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Cited by 5 publications
(3 citation statements)
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“…Concerning the material properties, silicon nitride is a good candidate to replace polysilicon. Silicon nitride is already involved in CMUT fabrication [ 28 ] and its material properties (similar Poisson’s ratio and higher Young modulus: around 0.25 and 300 GPa, respectively, [ 29 ]) could improve, according to Equation (16), the amplitude of the detected signal by a factor of ≈1.4 compared to polysilicon.…”
Section: Sensor Sensitivity: Acoustic–mechanical and Mechanical–elmentioning
confidence: 99%
“…Concerning the material properties, silicon nitride is a good candidate to replace polysilicon. Silicon nitride is already involved in CMUT fabrication [ 28 ] and its material properties (similar Poisson’s ratio and higher Young modulus: around 0.25 and 300 GPa, respectively, [ 29 ]) could improve, according to Equation (16), the amplitude of the detected signal by a factor of ≈1.4 compared to polysilicon.…”
Section: Sensor Sensitivity: Acoustic–mechanical and Mechanical–elmentioning
confidence: 99%
“…A SEM picture showing the top view of a grating target with 1 µm wide grooves is shown in figure 1b. Further details on suspended membrane microfabrication can be found in references [8,9].…”
Section: Jinst 12 C03040mentioning
confidence: 99%
“…The Young's moduli of silicon nitride and silicon oxide are 250 GPa and 70 GPa, respectively and the Poisson's ratio of both materials is assumed to be 0.3 [35]. The values of Young's modulus used in the modeling are typical of silicon nitride and oxide, but it is important to note that the modulus can change with stoichiometry for PECVD films [36]. A film thickness range from 0.1 to 1.3 μm is considered.…”
Section: Mechanical Modelmentioning
confidence: 99%