Abstract:The effect of both the process-induced defects and the dopant on the timedependent-dielectric breakdown in Ta 2 O 5 stacks is discussed. The breakdown degradation is analyzed in terms of specific properties of high-k stacks which make their dielectric breakdown mechanism completely different from that of classical SiO 2 . The relative impact of a number of factors constituting the reliability issues in Ta 2 O 5 -based capacitors (trapping in pre-existing traps, stress-induced new traps generation, the presence… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.