Peculiarities of resistive switching in thin films of glassy SeTeSnGe system

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

“…It is obvious that ̅ V th decreases exponentially with temperature. This approach is consistent with what has been described in the literature for different amorphous ChGs [11,12,39,66,67]. The thermal energy required to change the filament (material channel) from an amorphous to crystalline condition decreases as the temperature rises, resulting in a significant decrease in ̅…”

“…As observed from this table and figure 12(b), the resultant parallel straight lines have a single value of e th (0.282 ± 0.003 eV) for TSG−Sb films of different thicknesses indicating that e th is independent on sample film thickness. From the obtained average values of ∆ s E and e th for the investigated quaternary composition, the average value of the ratio ( ∆ ) / e = s E 0.484 th is comparable with prior results for various chalcogenide glasses [11,12,27,39,66,67]. It also fits with the value of ∆ / e s E th that is mathematically obtained using the electrothermal model for switching processes [27,28,43].…”

“…After the device is switched ON, the current filament is produced during the lock-on interval. Several variables can contribute to the production of the crystalline phase, including Joule heating generated by a high field and the concentration of the excessively charged carriers along the current pathway [28,67]. The resulting -I V curves for TSG−Sb as well as TSG [9] are similar for a memory switch.…”

“…V th [27,39,66,67]. In addition, the decrement in ̅ V th can be interpreted by the reduction in the energy barrier needed to crystallize the substance with rising temperature by filling up the charged defect centers with thermally excited charge carriers, which in turn lowers the value of ̅…”

Improvement of resistive switching in δ-CsPbI3 devices by inserting carbon nanotube

“…With the development of information technology, storage devices have become more and more important. Traditional memory devices research have gradually reached a plateau due to the demand for computational resources with low power consumption, high speed and high parallelism are constantly increasing, so new nonvolatile memory (NVMs), such as PCM, MRAM, FRAM, and RRAM, these storage devices begin to attract attention for people [1][2][3][4][5]. Generally, PCM [6][7][8] uses the conductive difference of crystalline and amorphous states to realize data storage, so its power consumption is difficult to be reduced due to the high current density required in the erasing process.…”