Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide

Blank, Tanya; Goldberg, Yu. A.; Konstantinov, O. V.; Никитин, В. Г.; Posse, E. A.

doi:10.1134/1.1813716

Cited by 22 publications

(29 citation statements)

References 12 publications

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“…The following anomaly was registered: in the temperature range starting from room temperature the contact resistance increases with increasing temperature T. In particular, such temperature dependence of the contact resistance was observed for In-n-GaP and In-n-GaN contacts. [1][2][3] The increase of contact resistance with temperature was also observed for ohmic contacts to p-and n-InP. 4 The authors of Ref.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors AIP Advances 2, 022113 (2012) All-metallic lateral spin valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy with a large spin signal Appl. Phys. Lett. 100, 052405 (2012) Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding Appl. Phys. Lett. 100, 053503 (2012) Ab initio quantum transport simulation of silicide-silicon contacts J. Appl. Phys. 111, 014305 (2012) Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions Appl. Phys. Lett. 99, 253504 (2011) Additional information on J. Appl. Phys. A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained.

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Section: Introductionmentioning

confidence: 99%

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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show abstract

“…It is more likely in the structures with low-energy optical phonons, and the mechanism has been demonstrated in weakly doped gallium arsenide [44,45]. The characteristic features in this case are high contact resistance and extremely low contact barrier height obtained in assumption that the traditional thermionic mechanism of current flow is predominant.…”

Section: Discussionmentioning

confidence: 91%

http://journal-spqeo.org.ua

Sachenko¹,

Конакова²,

Belyaev³

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts ohmicity up to helium temperatures.

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“…1a). It was noted in [3,4] that such behavior may be caused by conduction via metal shunts (formed by segregation of metal atoms on dislocations) shorting the space-charge region. X-ray diffractometry showed that the dislocation density in the GaN film under investigation was ≥ 10 8 cm -2 [11], which supported a possibility of such mechanism of current flow.…”

Section: Resultsmentioning

confidence: 99%

“…Contact resistivity ρ с decreases exponentially with temperature T at thermionic emission, while remaining independent of T at thermofield emission [1,2]. However, in some papers [3][4][5][6][7] non-typical (growing with temperature) dependences ρ с (Т) were detected in ohmic contacts. The authors of [3] assumed that these dependences ρ с (Т) were related with current flow via metal shunts formed when metal atoms segregate at dislocations, and made qualitative estimation of this process.…”

Section: Introductionmentioning

confidence: 99%

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN

Шеремет¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The temperature dependence of contact resistivity ρ с of Ti-Al-TiB 2 -Au ohmic contacts to n-GaN and effect of microwave treatment on ρ с are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by diffusion supply of electrons. It is shown that microwave treatment increases the dislocation density in the near-contact region of contact structure and reduces the relative spread of resistivity values of contacts formed on the wafer.

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Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide

Cited by 22 publications

References 12 publications

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

http://journal-spqeo.org.ua

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN

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