Peculiar properties of preferential sputtering of PbTe, SnTe, and GeTe by Ar+ ion plasma

Zayachuk, D.M.; Слынько, В. И.; Csík, A.

doi:10.1016/j.mssp.2018.07.037

Cited by 10 publications

(5 citation statements)

References 14 publications

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“…That is exactly what we observe. Thus, the results of the studies of the sputtering rate of IVB group tellurides, which we present here, are in full agreement with the previously obtained data on the surface binding energy of the metal components of these compounds [6] and confirm them.…”

Section: Discussionsupporting

confidence: 92%

“…where m is the exponent in the low energy power cross section, a quantity close to zero [12]. Our recent studies [6] on patterns produced by a sputtering process have shown that in the sequence of PbTe-SnTe-GeTe tellurides, the metal atoms surface binding energy decreases in the direction from a lighter atom to a heavier one. So, if U(Pb) < U(Sn) < U(Ge), then it has to be that v sp (PbTe) > v sp (SnTe) > v sp (GeTe).…”

Section: Discussionmentioning

confidence: 99%

“…(see, for example, reviews [2,3] and references). Our research over the last few years have been shown that all of this is fully applied also to IV-VI semiconductors PbTe, SnTe, and GeTe [4][5][6][7][8][9][10]. In particular, we found that the specificity of formation of the sputtered surface of PbTe crystals due to the processes of re-deposition of sputtered species leads to i) the phenomenon of aperiodical oscillations of Pb and Te sputtering [4,5]; ii) the morphology of the sputtering surfaces and the differences in the constituent masses of PbTe, SnTe, and GeTe cause the changes in the relative detection factor of the compound intrinsic constituents, due to which there is no unambiguous relationship between the ratio of concentrations of the telluride components and the ratio of the intensity of their sputtered signals; to solve the problem of quantitative determination of composition, it is necessary to introduce an adjustment to the magnitude of the relative detection factor, which depends on the sputtered surface morphology, the Ar + ions energy bombarding the surface and must be determined separately in each individual case [6][7][8]; iii) sputtering by low energy Ar + ions causes amorphisation effect on the surface of SnTe and GeTe crystals [9]; iv) near-non-preferential sputtering of SnTe surface leads to formation of sputtered surface always covered with a dense array of cones of nanometer range of height [10].…”

Section: Introductionmentioning

confidence: 99%

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Sputtering rate of lead, tin and germanium tellurides with low energy argon ions

Zayachuk¹,

Слынько²,

Csík³

2021

Comput. probl. electr. eng.

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Sputtering of PbTe, SnTe, and GeTe crystal samples by low-energy Ar+ ions are investigated, and the sputtering rate vsp of the studied compounds, as well as its dependence on both the composition of crystal matrix and the sputtering energy are determined. It is found that under the same conditions the sputtering rate in the sequence of GeTe-SnTe-PbTe telluride compounds increases when their average atomic weight increases. This phenomenon is explained by changes in the surface binding energy of metal atoms in lead, tin and germanium tellurides. It is shown that for all compounds the sputtering rate also increases with the increase in the sputtering energy. In the energy range from 160 to 550 eV,this increase is almost linear. The coefficients of change in the sputtering rate with energy dvsp/dE are calculated. The surface density of Ar+ ion-induced structures and the relative area of the sputtered surface covered by these structures are determined for the natural lateral surfaces of a PbTe crystal grown from melt by the Bridgman method as a function of sputtering energy. It is shown that both studied parameters decrease exponentially with increasing the sputtering energy.

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Section: Discussionsupporting

confidence: 92%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Sputtering rate of lead, tin and germanium tellurides with low energy argon ions

Zayachuk¹,

Слынько²,

Csík³

2021

Comput. probl. electr. eng.

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“…Remarkably, the ion-plasma sputtering of lead chalcogenides can be described by two approaches. The first approach used by Zayachuk et al [33] is based on the classical consideration of the interactions between ions and multi-component materials, which suggests that the sputtering predominantly involves individual atoms of certain chemical elements. The second approach, which was used in our previous studies [12] and applied again in this work, considers that the dissociation energies of molecules in the crystalline and gaseous states for lead chalcogenides exceed the values of the sublimation energy [34].…”

Section: Resultsmentioning

confidence: 99%

Variation of Surface Nanostructures on (100) PbS Single Crystals during Argon Plasma Treatment

et al. 2022

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The nanostructuring of the (100) PbS single crystal surface was studied under varying argon plasma treatment conditions. The initial PbS single crystals were grown by high-pressure vertical zone melting, cut into wafer samples, and polished. Subsequently, the PbS single crystals were treated with inductively coupled argon plasma under varying treatment parameters such as ion energy and sputtering time. Plasma treatment with ions at a minimum energy of 25 eV resulted in the formation of nanotips with heights of 30–50 nm. When the ion energy was increased to 75–200 eV, two types of structures formed on the surface: high submicron cones and arrays of nanostructures with various shapes. In particular, the 120 s plasma treatment formed specific cruciform nanostructures with lateral orthogonal elements oriented in four <100> directions. In contrast, plasma treatment with an ion energy of 75 eV for 180 s led to the formation of submicron quasi-spherical lead structures with diameters of 250–600 nm. The nanostructuring mechanisms included a surface micromasking mechanism with lead formation and the vapor–liquid–solid mechanism, with liquid lead droplets acting as self-forming micromasks and growth catalysts depending on the plasma treatment conditions (sputtering time and rate).

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“…In general, SnTe films are produced by means of spark plasma sintering, magnetron sputtering, pulsed laser deposition, molecular-beam epitaxy (MBE), etc. [5][6][7][8]. All these methods rely on the availability of precursors, vacuum requisitions, and stability at high temperatures, imposing restrictions on these methods and rendering them expensive to apply.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Atomic Layer Epitaxy Deposition of Ultrathin SnTe Films

Manhabosco¹,

Aloni²,

Kuykendall³

et al. 2019

rpm

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Tin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between-0.15 V and-0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites.

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Peculiar properties of preferential sputtering of PbTe, SnTe, and GeTe by Ar+ ion plasma

Cited by 10 publications

References 14 publications

Sputtering rate of lead, tin and germanium tellurides with low energy argon ions

Sputtering rate of lead, tin and germanium tellurides with low energy argon ions

Variation of Surface Nanostructures on (100) PbS Single Crystals during Argon Plasma Treatment

Electrochemical Atomic Layer Epitaxy Deposition of Ultrathin SnTe Films

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