Peculiar properties of electron transport in single-wall armchair carbon nanotubes

Pozdnyakov, Dmitry; Galenchik, Vadim; Борздов, В. М.; Komarov, F. F.

doi:10.1117/12.680528

Cited by 8 publications

(22 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(2) is valid. However, when the scattering rates are calculated taking into account high-order quantum effects such as the collisional broadening [4][5][6][7][8] …”

Section: Theorymentioning

confidence: 99%

“…Thus, the considering contradiction (see Eqs. (3) and (4)) is caused by violation of the approximations that the electron quantum states are stable or/and one-particle while calculating the electron scattering rates taking into account the high-order quantum effects [4][5][6][7][8].…”

Section: Theorymentioning

confidence: 99%

“…At the same time while developing a similar model of electron transport in nanowires, taking into account the high-order quantum effects (the collisional broadening and the quantum correlations between scattering events) (see, for example, Refs. [4][5][6][7][8]), we have met a problem. It is turned out that some obtained results are in contradiction to the fundamental physical principles.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of scattering processes on electron quantum states in nanowires

et al. 2007

View full text Add to dashboard Cite

In the framework of quantum perturbation theory the self-consistent method of calculation of electron scattering rates in nanowires with the one-dimensional electron gas in the quantum limit is worked out. The developed method allows both the collisional broadening and the quantum correlations between scattering events to be taken into account. It is an alternative per se to the Fock approximation for the self-energy approach based on Green's function formalism. However this approach is free of mathematical difficulties typical to the Fock approximation. Moreover, the developed method is simpler than the Fock approximation from the computational point of view. Using the approximation of stable one-particle quantum states it is proved that the electron scattering processes determine the dependence of electron energy versus its wave vector.

show abstract

“…(2) is valid. However, when the scattering rates are calculated taking into account high-order quantum effects such as the collisional broadening [4][5][6][7][8] …”

Section: Theorymentioning

confidence: 99%

Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of scattering processes on electron quantum states in nanowires

et al. 2007

View full text Add to dashboard Cite

show abstract

“…(6) and (8) must be solved self-consistently [10,11]. Then the A&POPSR determined by the formulae (1) - (5) can be calculated in accordance with [9] using the following equation:…”

mentioning

confidence: 99%

“…where B k is the Boltzmann constant; is the Planck constant; m * is the electron effective mass; ρ is the mass density of GaAs; v is the sound velocity in GaAs; is the acoustic deformation potential; ac B Т is the temperature; Θ is the unit step function; E is the electron kinetic energy; ( , ) ij x y ψ and ( , ) lk x y ψ are the wave functions of the initial state with subband energy level and quantum numbers {i, j} and of the final one with subband energy level and the quantum numbers {l, k}, respectively; is the collisional broadening factor which characterizes the electron energy uncertainty caused by all possible scattering mechanisms in the state with quantum numbers {i, j} [9] (in the given case we are considering only the acoustic and polar optical scattering mechanisms);…”

mentioning

confidence: 99%

Self‐consistent calculations of phonon scattering rates in the GaAs transistor structure with one‐dimensional electron gas

Borzdov

Pozdnyakov

Galenchik

et al. 2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined, too. It was shown that in order to treat the scattering rates rigorously it is important to search for electron energy levels by means of the self-consistent solution of Schrodinger and Poisson equations and to take into account the collisional broadening.Modern technologies in micro-and nanoelectronics allow different semiconductor device structures of very small sizes and various geometry to be created. In particular, high-speed field effect GaAs transistors with one-dimensional electron gas (1DEG) or, in other words, quantum wire transistors [1,2] have been successfully created and actively investigated. It is supposed that on the basis of these transistors a new generation of high-speed GaAs ULSI circuits can be produced.It is known that the efficient design of such devices today is a very hard problem without numerical simulation of their electrical characteristics. In this regard, one of the most promising simulation methods is the Monte Carlo one [3]. Its correct implementation is possible when the rigorous expressions for the scattering rates for all dominant scattering mechanisms in the simulated structure are known. In this connection it is necessary to note that acoustic and polar optical phonon scattering are two of the important scattering mechanisms in GaAs structures with 1DEG [4][5][6][7].Several works were devoted to the calculation of acoustic and polar optical phonon scattering rates (A&POPSR) in quantum wires. Particularly, in the papers [5,7] expressions for the A&POPSR in the rectangular quantum wires were proposed taking into account the collisional broadening (in case of intersubband scattering being the same as the broadening of the energy levels) in the first order approximation. It was shown that the functions of A&POPSR versus electron kinetic energy have not any singularity points. The latter is especially important for the direct use of the derived expressions in Monte Carlo procedures as it naturally eliminates the tendency to infinity of A&POPSR in singularity points related to the features of the density of states in quantum wires. Besides, the rigorous incorporation of the phonon scattering into the charge transport simulation by means of Monte Carlo method requires the exact knowledge of electron subband energy levels in the considered quantum well as they directly enter into the expressions for A&POPSR. These energy levels in real device structures with an arbitrary quantum well can be found only by means of numerical self-consistent solution of the corresponding Schrodinger and Poisson equations.In this work we present the results of calculation of A&POPSR in the GaAs-transistor structure (see Fig. 1), with taking into account the collisional broadening caused by only acoustic and polar optical phonon scattering, and exa...

show abstract

Validity of approximations applied in calculations of single-wall metallic carbon nanotube current-voltage characteristics

Pozdnyakov

2012

J Comput Electron

View full text Add to dashboard Cite

The calculation results of dependencies of electric current in the infinitely long single-wall metallic carbon nanotubes of armchair type with different diameter values on the strength of constant and uniform longitudinal electric field applied to them are presented in this study. On the one hand the results have been obtained by an accurate numerical self-consistent tight-binding full-band solution of the Boltzmann transport equations for electrons and phonons in the electric quantum limit. On the other hand the results have been obtained by solution of these equations after application of a number of commonly used simplifications and approximations. It is ascertained that the approximately calculated dependencies considerably diverge from the rigorously calculated ones. In addition the relaxation time of non-equilibrium phonons in the single-wall metallic carbon nanotubes has been estimated by means of comparison of the calculation results with the well-known experimental data. Its value is equal to 2.2 ± 0.1 ps.

show abstract

Peculiar properties of electron transport in single-wall armchair carbon nanotubes

Cited by 8 publications

References 0 publications

Influence of scattering processes on electron quantum states in nanowires

Influence of scattering processes on electron quantum states in nanowires

Self‐consistent calculations of phonon scattering rates in the GaAs transistor structure with one‐dimensional electron gas

Validity of approximations applied in calculations of single-wall metallic carbon nanotube current-voltage characteristics

Contact Info

Product

Resources

About