Peculiar lamellar structure in Al single crystals grown in oxygen-doped Al and Al-Sn thin films

Abstract

The lamellar structure of Al single crystals grown in pure and Sn‐doped Al films in the presence of oxygen contamination is investigated by cross sectional transmission electron microscopy. The lamellae are parallel with the Al(111) planes. According to the EELS investigations of Al‐20% Sn films, the lamellae are separated by interface layers containing oxygen and Sn. The lamellar structure is a growth structure formed by the nucleation and growth of islands of the lamellae. The interface can be formed by the process‐induced segregation of oxygen on the (111) Al crystal faces.

The phase, morphology and surface characterization of Ti–Mo alloy films prepared by magnetron sputtering

“…4 The SEM surface and fracture images and the EDX results of the Ti-30 wt% Mo alloy films at different substrate temperature. This is because the impurities or additives may lead to the formation of a segregation layer 40,45 or a new phase 39,46 on the phase boundaries of the forming majority phase, which would change the growth mode of the lms. In the present work, Ti-30Mo alloy lms have a single phase in the whole T s range, and the transition from a poor columnar growth to a dense columnar growth is consistent with the transition from zone 1 to zone 2 in the SZMs.…”