Pechini sol–gel deposition and luminescence properties of Y3Al5−xGaxO12:Ln3+ (Ln3+=Eu3+, Ce3+, Tb3+; 0≤x≤5) thin films

Jia, Peiyun; Lin, Jun; Han, Xiumei; Yu, Min

doi:10.1016/j.tsf.2004.12.055

Cited by 63 publications

(40 citation statements)

References 21 publications

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“…33 It can be seen from 8 -4f 7 5d transition, respectively, and the third ͑358 nm͒ due to the 7 F 6 -5 D 0 ͑f-f͒ transition of Tb 3+ . 34,35 Note that the energy difference between the spin-forbidden ͑234 nm͒ and spin-allowed component ͑277 nm͒ is 6634 cm −1 , which basically agrees with the value ͑6000 cm −1 ͒ reported previously in Ref. 36.…”

Section: Resultssupporting

confidence: 90%

Tunable Cathodoluminescence Properties of Tb[sup 3+]-Doped La[sub 2]O[sub 3] Nanocrystalline Phosphors

Liu

Zou

2010

J. Electrochem. Soc.

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Nanocrystalline Tb 3+ -doped La 2 O 3 phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction ͑XRD͒, field-emission-scanning electron microscopy ͑FESEM͒, photoluminescence, cathodoluminescence ͑CL͒ spectra, and lifetimes were utilized to characterize the synthesized phosphors. The XRD results revealed that a pure La 2 O 3 phase can be obtained at 700°C. FESEM images indicated that the La 2 O 3 :Tb 3+ phosphors are composed of aggregated spherical particles with sizes ranging from 60 to 100 nm. Under the excitation of UV light and low voltage electron beams ͑0. Although LCDs hold almost more than 50% of the market for flat panel displays, in demanding applications found in military applications, medical instruments, vehicles, and dusty environments, the weaknesses of LCDs are severe, viz., small viewing angle, limited operation temperature, relatively low brightness, and sensitivity for constant movement.2-4 Therefore, a considerable amount of research has been focused on the development of emissive flat panels. Among the emissive display technologies, field-emission displays ͑FEDs͒ have been developed as one of the most promising flat panel displays due to its potential to provide displays with thin panel thickness, self-emission, wide viewing, quick response, high brightness, high contrast ratio, light weight, and low power consumption. 5,6 Monocolor Spindt-type FEDs have been supplied to the market, and they have proven good reliability and performance since 7 years ago, 7 and preparation for mass production of color FEDs had started in recent years. Fundamentally, FEDs are constructed by three elemental parts, such as micro or nanofabrication of emitters, vacuum packaging, and phosphor anodes. Each of the three elements is essential to realize FEDs with interrelationship. 7,8 FEDs must operate at significantly lower excitation voltages ͑Յ5 kV͒ and higher current densities ͑10-100 A/cm 2 ͒ than CRTs. Thus phosphors for FEDs are required to have a high efficiency at low voltages, high resistance to current saturation, long service time, and equal or better chromaticity than CRT phosphors. 9The demand for high resolution and increased efficiency in phosphors for FEDs has promoted the development of phosphors that perform at low voltages.10-14 Many efficient sulfide-based phosphors, such as Y 2 O 2 S:Eu, Gd 2 O 2 S:Tb, SrGa 2 S 4 :Eu, Zn͑Cd͒S:Cu,Al, ZnS:Ag,Cl, etc., have been explored as possible low voltage phosphors.15-18 Unfortunately, sulfide phosphors are easy to decompose and to emit sulfide gases under the electron excitation, subsequently causing the cathodes to deteriorate, thus lowering the lifetime and luminous efficiency of phosphors. 19,20 Oxide-based phosphors are more stable and environmental friendly in comparison with sulfides. Therefore, rare-earth-doped oxide-based phosphors for FEDs have been of great interest due to their excellent light output, color rendering properties, and superior stability under electron bombardment. [21][22][23] One of the promising candidate...

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Section: Resultssupporting

confidence: 90%

Tunable Cathodoluminescence Properties of Tb[sup 3+]-Doped La[sub 2]O[sub 3] Nanocrystalline Phosphors

Liu

Zou

2010

J. Electrochem. Soc.

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“…The value for Yb 3+ is (5.9 ± 0.1) eV 22−24 and for Eu 3+ (5.5 ± 0.2) eV. 22,[25][26][27] The band gap E VC , i.e. the energy difference between the bottom of the CB or mobility edge and the top of the valence band, can be estimated from the energy of the host exciton creation, which is about 6.95 eV.…”

Section: Resultsmentioning

confidence: 99%

Thermoluminescence investigation of donor (Ce3+, Pr3+, Tb
You
¹
,
Bos
²
,
Shi
³

et al. 2012
Phys. Rev. B
67
2
13
0
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“…The host exciton energy E ex was estimated by adding the similar calibration value of 0.46 eV to fundamental absorption, as in our previous paper [18] and shown in column 2 of [18,20]. The stacked VRBE diagrams were constructed mainly using the E CT parameters (charge transfer energy of Eu 3+ ) from the data reported by Jia et al [33] and U (6,A) (energy difference between Eu 2+ and Eu 3+ ) reported by Dorenbos [34], as shown in columns 3 and 4 of system as shown in Fig. 9, the band maxima from this work were used.…”

mentioning

confidence: 99%

Thermal ionization and thermally activated crossover quenching processes for5d−4fluminescence inY3Al
Ueda
¹
,
Meijerink
²
,
Dorenbos
³

et al. 2017
Phys. Rev. B
70
2
42
0
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We investigated thermally activated ionization and thermally activated crossover as the two possibilities of quenching of 5d luminescence in Pr 3+ -doped Y 3 Al 5−x Ga x O 12 . Varying the Ga content x gives the control over the relative energy level location of the 5d and 4f 2 :3 PJ states of Pr 3+ and the host conduction band (CB). Temperature-dependent luminescence lifetime measurements show that the 5d luminescence quenching temperature T 50% increases up to x = 2 and decreases with further increasing Ga content. This peculiar behavior is explained by a unique transition between the two quenching mechanisms which have an opposite dependence of thermal quenching on Ga content. For low Ga content, thermally activated crossover from the 4f 5d state to the 4f 2 ( 3 PJ ) states is the operative quenching mechanism. With increasing Ga content, the activation energy for thermally activated crossover becomes larger, as derived from the configuration coordinate diagram, while from the vacuum referred binding energy diagram the activation energy of thermal ionization becomes smaller. Based on these results, we demonstrated that the thermal quenching of Pr 3+ : 5d 1 -4f luminescence in Y 3 Al 5−x Ga x O 12 with x = 0, 1, 2 is a thermally activated crossover while for x = 3, 4, 5 it results from the thermal ionization.

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Pechini sol–gel deposition and luminescence properties of Y3Al5−xGaxO12:Ln3+ (Ln3+=Eu3+, Ce3+, Tb3+; 0≤x≤5) thin films

Cited by 63 publications

References 21 publications

Tunable Cathodoluminescence Properties of Tb[sup 3+]-Doped La[sub 2]O[sub 3] Nanocrystalline Phosphors

Tunable Cathodoluminescence Properties of Tb[sup 3+]-Doped La[sub 2]O[sub 3] Nanocrystalline Phosphors

Thermoluminescence investigation of donor (Ce3+, Pr3+, Tb
You
¹
,
Bos
²
,
Shi
³

et al. 2012
Phys. Rev. B
67
2
13
0
View full text Add to dashboard Cite

Thermal ionization and thermally activated crossover quenching processes for5d−4fluminescence inY3Al
Ueda
¹
,
Meijerink
²
,
Dorenbos
³

et al. 2017
Phys. Rev. B
70
2
42
0
View full text Add to dashboard Cite

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Pechini sol–gel deposition and luminescence properties of Y3Al5−xGaxO12:Ln3+ (Ln3+=Eu3+, Ce3+, Tb3+; 0≤x≤5) thin films

Cited by 63 publications

References 21 publications

Tunable Cathodoluminescence Properties of Tb[sup 3+]-Doped La[sub 2]O[sub 3] Nanocrystalline Phosphors

Tunable Cathodoluminescence Properties of Tb[sup 3+]-Doped La[sub 2]O[sub 3] Nanocrystalline Phosphors

Thermoluminescence investigation of donor (Ce3+, Pr3+, TbYou1, Bos2, Shi3 et al. 2012Phys. Rev. B672130View full textAdd to dashboardCite

Thermal ionization and thermally activated crossover quenching processes for5d−4fluminescence inY3AlUeda1, Meijerink2, Dorenbos3 et al. 2017Phys. Rev. B702420View full textAdd to dashboardCite

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Thermoluminescence investigation of donor (Ce3+, Pr3+, Tb
You
¹
,
Bos
²
,
Shi
³

et al. 2012
Phys. Rev. B
67
2
13
0
View full text Add to dashboard Cite

Thermal ionization and thermally activated crossover quenching processes for5d−4fluminescence inY3Al
Ueda
¹
,
Meijerink
²
,
Dorenbos
³

et al. 2017
Phys. Rev. B
70
2
42
0
View full text Add to dashboard Cite