“…If no new electron is injected, then the surface potential will decrease to zero. However, many experimental results show that after a long time without new electron injection, the surface potential still has a certain distance from the ground potential (the value may be 10–50% of the initial potential ,, ). This means that other binding factors enable the surface to capture certain electron and store it for a long time, which many scholars call “deep traps”. ,− Previous studies have shown that electron needs certain energy to cross the barriers of surface bumps and pits, so a rough surface can serve as a macroscopic barrier to capture charge .…”
Section: Resultsmentioning
confidence: 99%
“…The Fermi level difference between the metal and the polymer generates the interfacial space charge . The electron must cross the space charge layer’s built-in electric field (or potential barrier) from the electrode to the polymer (Figure a). In an ideal state, the Schottky barrier height φ B of the copper electrode–polymer interface conforms to the following equation (eq ):…”
Insufficient surface insulation margin is the primary
challenge
for a 10 kV plus high-voltage semiconductor module. Surface charge
accumulation and electric field distortion are the leading causes
of surface insulation failure. Power modules restrict leakage loss,
so only insulation dielectrics with low surface conductivity can be
used. However, low conductivity, accumulated charge dissipation, and
distorted electric field optimization have always been contradictory.
A potential barrier increase and electron affinity decrease are both
less coupled approaches with conductivity, which may have the potential
for reducing surface charge accumulation. Here, surface charge accumulation
inhibition and local electric field optimization were synchronously
realized by tailored coating deposition with colliding plasma jets.
This novelty approach leads to a finer interfacial modification of
the triple junction and its nearby interfaces. The high-barrier and
low-affinity coatings deposited by colliding plasma jets suppress
charge injection (electrode–polymer interface) and promote
charge dissipation (gas–polymer interface), respectively. At
the same time, the small-area semiconductor deposited at the triple
junction relieves the distortion of the electric field. In the end,
while maintaining a low leakage current, the surface flashover voltages
of polytetrafluoroethylene, polyimide, and epoxy packaging polymers
are significantly increased by 69.7, 43.2, and 39.6%, respectively.
Notably, the normalized leakage loss is less than 3/10,000 of the
commercially available SiC module, which vastly differs from the surface
insulation improvement strategy that blindly increases surface conductivity.
This tailored coating modification strategy provides a new idea for
dielectric research. It has reasonable practicability due to fast,
cheap, and environmentally friendly colliding plasma jets.
“…If no new electron is injected, then the surface potential will decrease to zero. However, many experimental results show that after a long time without new electron injection, the surface potential still has a certain distance from the ground potential (the value may be 10–50% of the initial potential ,, ). This means that other binding factors enable the surface to capture certain electron and store it for a long time, which many scholars call “deep traps”. ,− Previous studies have shown that electron needs certain energy to cross the barriers of surface bumps and pits, so a rough surface can serve as a macroscopic barrier to capture charge .…”
Section: Resultsmentioning
confidence: 99%
“…The Fermi level difference between the metal and the polymer generates the interfacial space charge . The electron must cross the space charge layer’s built-in electric field (or potential barrier) from the electrode to the polymer (Figure a). In an ideal state, the Schottky barrier height φ B of the copper electrode–polymer interface conforms to the following equation (eq ):…”
Insufficient surface insulation margin is the primary
challenge
for a 10 kV plus high-voltage semiconductor module. Surface charge
accumulation and electric field distortion are the leading causes
of surface insulation failure. Power modules restrict leakage loss,
so only insulation dielectrics with low surface conductivity can be
used. However, low conductivity, accumulated charge dissipation, and
distorted electric field optimization have always been contradictory.
A potential barrier increase and electron affinity decrease are both
less coupled approaches with conductivity, which may have the potential
for reducing surface charge accumulation. Here, surface charge accumulation
inhibition and local electric field optimization were synchronously
realized by tailored coating deposition with colliding plasma jets.
This novelty approach leads to a finer interfacial modification of
the triple junction and its nearby interfaces. The high-barrier and
low-affinity coatings deposited by colliding plasma jets suppress
charge injection (electrode–polymer interface) and promote
charge dissipation (gas–polymer interface), respectively. At
the same time, the small-area semiconductor deposited at the triple
junction relieves the distortion of the electric field. In the end,
while maintaining a low leakage current, the surface flashover voltages
of polytetrafluoroethylene, polyimide, and epoxy packaging polymers
are significantly increased by 69.7, 43.2, and 39.6%, respectively.
Notably, the normalized leakage loss is less than 3/10,000 of the
commercially available SiC module, which vastly differs from the surface
insulation improvement strategy that blindly increases surface conductivity.
This tailored coating modification strategy provides a new idea for
dielectric research. It has reasonable practicability due to fast,
cheap, and environmentally friendly colliding plasma jets.
“…Epoxy resin insulation materials, a kind of polar polymer material, have been extensively applied in many electrical equipment such as power electronic packaging, − outdoor insulation, − and power cable , due to the excellent insulation strength, mechanical properties, and processability. The epoxy resin encapsulated products are inevitably invaded by moisture or water during long-term service, leading to the deterioration of the epoxy resin insulation materials.…”
The unclear understanding of the water diffusion behavior posts a big challenge to the manipulation of water absorption properties in epoxy resins. Herein, we investigated the water diffusion behavior and its relationship with molecule structures inside an epoxy resin mainly by the nonequilibrium molecular dynamics and experiments. It is found that at the initial rapid water absorption stage, bound water and free water both contribute, while at the later slow water absorption stage, free water plays a dominant role. The observed evolution of free water and bound water cannot be explained by the traditional Langmuir model. In addition, molecule polarity, free volume, and segment mobility can all influence the water diffusion process. Hence, the epoxy resin with low polarity and high molecular segment mobility is endowed with higher diffusion coefficients. The saturated water absorption content is almost dependent on the polarity. The understanding of how water diffuses and what decides the diffusion process is critical to the rational design of molecule structures for improving the water resistance in epoxy resin.
“…Therefore, effective heat dissipation has become essential for advancing integrated circuit (IC) chips. − Generally, a layer of a thermal interface material (TIM) with high thermal conductivity is added along the through-plane direction of the penetration plane between the chip and the heat sink to ensure heat dissipation in IC chips . Epoxy resin (ER) is widely used as a polymer matrix in TIMs because of its excellent mechanical strength, insulation performance, and processing ease. − However, its modest thermal conductivity of only 0.2 W/m K falls short of IC-chip heat–dissipation demands. Therefore, thermally conductive fillers such as Al 2 O 3 , BP, SiC, and BN are generally added to TIMs.…”
The introduction of wide-band semiconductor devices has led to the development of electronic components with a high degree of integration and power density. The use of dielectric polymers can guarantee the performance of electronic components while maximizing their operational reliability. However, this polymer performance is often enhanced at the expense of its electrical insulation properties and processability. Herein, we report the synthesis of epoxy resin composites filled with boron nitride nanosheets (BNNSs) functionalized with copper nanowires (Cu NWs). Through encapsulation within a polydopamine coating, Cu NWs and BNNSs exhibit excellent electrical insulation properties and high dispersion, and their 1D and 2D interconnected networks enable effective charge and heat transfer. Hence, these epoxy resin composites showed a thermal conductivity of 1.2 W/m K at a filler loading rate of 26 wt %, marking a staggering 486% increase compared to pure epoxy resin. These composites also showed low dielectric loss, enhanced electrical insulation properties, matched thermal expansion coefficients, and low water absorption. Experimental analyses and simulations indicated that the composites had strong heat dissipation capability, meeting the technical specifications for electronic packaging materials, and are thus expected to find use in electronic device packaging.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.