2022
DOI: 10.1088/1402-4896/ac71db
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Peak profile analysis, electrical, dielectric behaviour and defect mediated yellow photoluminescence of zinc oxide nanostructures

Abstract: A simple chemical method has been used to synthesize pure and crystalline ZnO nanoparticles. XRD study revealed hexagonal unit-cell with crystallite size 18.32 nm. Non-Debye type relaxation mechanism leads to an additional constant-phase-contribution to the equivalent parallel RC-network. The grain-boundary effect to the conductivity is very large. The dc conductivity was calculated to be 4.9×10-8 (Ω-cm)-1. The high loss-tangent at lower frequency is contributed by the large grain boundary effect of the materi… Show more

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(1 citation statement)
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“…Over recent years, organic-inorganic hybrid perovskite materials, CH 3 NH 3 PbX 3 (X = Cl − , Br − and I − ), have grown to be a hit topics in the field of optoelectronic facilities, such as light-emitting diodes, solar cells, lasers and photodetectors [1][2][3][4][5][6][7][8][9][10][11][12]. In particular, owing to their exceptional optoelectronic characteristics (such as adjustable direct band gap, excellent bipolar charge transport performance, and high light absorption coefficient), CH 3 NH 3 PbX 3 -based photodetectors have attracted increasing attention, and the devices with various structures have been demonstrated, including metal-semiconductor-metal (MSM), heterojunction and schottky structures [13][14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%
“…Over recent years, organic-inorganic hybrid perovskite materials, CH 3 NH 3 PbX 3 (X = Cl − , Br − and I − ), have grown to be a hit topics in the field of optoelectronic facilities, such as light-emitting diodes, solar cells, lasers and photodetectors [1][2][3][4][5][6][7][8][9][10][11][12]. In particular, owing to their exceptional optoelectronic characteristics (such as adjustable direct band gap, excellent bipolar charge transport performance, and high light absorption coefficient), CH 3 NH 3 PbX 3 -based photodetectors have attracted increasing attention, and the devices with various structures have been demonstrated, including metal-semiconductor-metal (MSM), heterojunction and schottky structures [13][14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%