PdErSi Source and Drain for Schottky Barrier MOSFET with HfO&lt;sub&gt;2&lt;/sub&gt; Gate Insulator Fabricated by Low Thermal Budget Gate-First Process

Mailig, Rengie Mark D.; Aruga, Yuichiro; Ohmi, Shun–ichiro

doi:10.7567/ssdm.2020.c-5-03

Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2020

DOI: 10.7567/ssdm.2020.c-5-03

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PdErSi Source and Drain for Schottky Barrier MOSFET with HfO<sub>2</sub> Gate Insulator Fabricated by Low Thermal Budget Gate-First Process

Rengie Mark D. Mailig¹,

Yuichiro Aruga²,

Shun–ichiro Ohmi³

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PdErSi Source and Drain for Schottky Barrier MOSFET with HfO<sub>2</sub> Gate Insulator Fabricated by Low Thermal Budget Gate-First Process

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