Pd/porous-GaAs Schottky contact for hydrogen sensing application

Salehi, Alireza; Nikfarjam, Alireza; Kalantari, Dara Jamshidi

doi:10.1016/j.snb.2005.03.064

Cited by 75 publications

(33 citation statements)

References 17 publications

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“…The NW sensor reported here achieves a drift limited LOD of only 5 ppm and a sensitivity significantly exceeding that of nanosensors and several recently reported bulk diode designs [21][22][23]. Fig.…”

Section: Introductionmentioning

confidence: 78%

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Skucha

Fan

Jeon

et al. 2010

Sensors and Actuators B: Chemical

132

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a b s t r a c tThis work presents the design, fabrication, and characterization of a hydrogen sensor based on a palladium/nanowire Schottky barrier field-effect transistor that operates at room temperature. The fabricated sensor consists of boron-doped silicon nanowire arrays that are contact printed on top of a SiO 2 /Si substrate with subsequently evaporated Pd contacts. The fabrication process is compatible with post-CMOS and plastic substrate integration as it can be completed at temperatures below 150• C with good yield and repeatability. The sensor can reliably and reversibly detect H 2 concentrations in the range from 3 ppm to 5% and has a sensitivity of 6.9%/ppm at 1000 ppm. A response distinguishable from drift and noise is produced in less than 5 s for H 2 concentrations over 1000 ppm and less than 30 s for concentrations over 100 ppm. The sensor settles to 90% of the final signal value in about 1 h at lower concentrations and less than 1 min at 10,000 ppm H 2 . Drift over an 87-h measurement period is below 5 ppm H 2 concentration.

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Section: Introductionmentioning

confidence: 78%

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Skucha

Fan

Jeon

et al. 2010

Sensors and Actuators B: Chemical

132

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“…Then, part of them quickly diffuse toward the Pt/InAlAs interface. The hydrogen accumulation and formation of a dipolar layer at the Pt/InAlAs interface, caused by the built-in electrical field, change the effective work function of Pt metal and the effective barrier height of the Schottky contacts [16]. This effect can be proven by the current increment as seen in Fig.…”

Section: Resultsmentioning

confidence: 92%

Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor

Hung¹,

Tsai²,

Chen³

et al. 2008

Sensors and Actuators B: Chemical

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“…That capacitance value can be measured by means of an electronic evaluation system. A current moisture value is ascertained with the measured capacitance value, using further parameters such as temperature and comparative parameters [13,14]. Humidity sensing elements of the capacitance sensing type usually include a moistureinsensitive, non-conducting structure with appropriate electrode elements mounted or deposited on the structure along with a layer or coating of dielectric, highly moisture-sensitive material overlaying the electrodes and positioned so as to be capable of absorbing water from the surrounding atmosphere and reaching equilibrium in a short period of time.…”

Section: The Sensing Elementmentioning

confidence: 99%

Intelligent Humidity Sensor for Wireless Sensor Network Agricultural Application

Shinghal¹,

Noor²,

Srivastava³

et al. 2011

IJWMN

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Wireless Sensor Networks (WSN) is now widely used in precision agriculture applications. Sensors play an important role in WSN.The traditional humidity sensors employed in the agriculture have a drawback that they acquire a large amount of data which is to be transmitted or processed. Whereas the intelligent sensor proposed in this paper uses a conventional sensor and an embedded processor that can process the data acquired using algorithms to reduce the amount of data collected, to extract only relevant information and to present this information in a format which minimizes post-processing latency. As a result of which the final processing end has to perform a little computation that too only on features (like significant changes in humidity) rather on the huge data hence reducing the power consumption. The intelligent humidity sensor reduces the amount of data processed by 50% (depending upon humidity variations) and thereby also reducing the power consumption.

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Pd/porous-GaAs Schottky contact for hydrogen sensing application

Cited by 75 publications

References 17 publications

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor

Intelligent Humidity Sensor for Wireless Sensor Network Agricultural Application

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