Pd/GaN(0001) interface properties

Grodzicki, M.; Mazur, Piotr; Zuber, S.; Ciszewski, A.

doi:10.2478/s13536-013-0183-8

Cited by 12 publications

(15 citation statements)

References 12 publications

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“…Next, for the Ar + -ions bombardment the Ga 3d is located at a BE of 19.2 eV and 19.45 eV followed by annealing. The energy distance between the Ga 3d peak and the VBM for all samples oscillates around 17.75 eV, which is consistent with previously reported results [14,17,18].…”

Section: Resultssupporting

confidence: 92%

The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

et al. 2019

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Mg-doped GaN(0001) epitaxial layers, grown by molecular beam epitaxy in a setup interconnected with an analytic chamber, were analysed by means of X-ray photoelectron spectroscopy to study their physicochemical properties under different preparation methods. Investigations were carried out for the following samples: asgrown, air-exposed and treated with isopropanol (IPA) or HCl, and in situ cleaned. The X-ray photoelectron spectroscopy results confirmed that the air-exposed samples are contaminated with oxygen and carbon atoms, which can be removed only by in situ cleaning. The valence band maximum varies in the range from 1.2 eV to 2.7 eV below the Fermi level for the as-grown and ex situ prepared samples, respectively. The valence band maximum for in situ cleaned sample is located at 1.7 eV below the Fermi level.

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Section: Resultssupporting

confidence: 92%

The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

et al. 2019

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“…2), which is in accord with tabular data. Intensity of the Ga-3d peak is slightly decreased, and its position is shifted a little in comparison with the clean GaN surface due to Schottky's barrier formation at the interface [16]. Moreover, any core states of Pd and Ga do not display shifts or shape changes, which indicates no chemical reaction between them.…”

Section: First Cycle Of Pd Deposition and Annealingmentioning

confidence: 97%

“…Their results were inconsistent. In some reports, palladium uniformly covered the surface and grew epitaxially [14,15]; in others, the Pd films had grainy structure [16]. Some results showed 3D palladium nanoislands as well as surface and bulk alloys formed after annealing [17,18]; other research excluded the formation of alloys or interfacial compounds [19].…”

Section: Introductionmentioning

confidence: 96%

Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001)

et al. 2015

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Palladium was deposited gradually under ultrahigh vacuum onto a well-defined surface of (0001)-oriented n-type GaN, at room temperature. Each deposition step was followed by annealing. Physicochemical properties of the Pd adlayers were in situ investigated prior to and after annealing by the X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and atomic force microscopy techniques. Annealing resulted in the formation of GaPd 2 and GaPd intermetallic compounds at 550°C and at 800°C. Even for thicker layers, the compounds were strongly dispersed, forming 3D nanostructures. The substrate uncovered by the compounds revealed Ga-rich GaN(0001)-(1 9 1) surface. Formation of Ga-Pd-N bonds or Pd nitrides was not detected at the surface. The Ga-Pd intermetallic compound surface engineered on the GaN(0001) substrate can be used as the strongly dispersed catalyst or a model catalyst.

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“…After Ni deposition the Fermi edge is clearly visible, in the spectrum is the characteristic maximum with a BE equals 1.2 eV. The SBH can be simply calculated by the same procedure as applied for Mn films on GaN in the text above (Section 3.2), as well as for Pd films on GaN [101]. The annealing of Ni films on GaN(0001) is interesting from a basic point of view to get a deep insight into the processes occurring on the interface, since this stage is often used in contact creation technology.…”

Section: Ni On Gan(0001)mentioning

confidence: 99%

Properties of Thin Film-Covered GaN(0001) Surfaces

Grodzicki

2020

2nd Coatings and Interfaces Web Conference (CIWC-2 2020)

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In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

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Pd/GaN(0001) interface properties

Cited by 12 publications

References 12 publications

The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001)

Properties of Thin Film-Covered GaN(0001) Surfaces

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