PbTe/CdTe single quantum wells grown on GaAs (100) substrates by molecular beam epitaxy

Epitaxial Growth and Optical Properties of PbTe/CdTe Semiconductor Heterostructures

“…Another interesting point in Fig. 3a is that observed peaks are composed of two lines, which is clearly visible at T = 4.2 K. Such line splitting was observed previously in the case of single PbTe/CdTe QW grown on GaAs substrate [1] and was interpreted taking into account the large difference in thermal expansion coefficient of CdTe and PbTe materials: 4.7 × 10…”

“…and 20 × 10 −6 K −1 , respectively [1]. It results in an increase in the lattice mismatch of the PbTe/CdTe up to ≈ 1% below 100 K, and causes the increase in strain in the region of PbTe well.…”

“…In this spectral region low-dimensional structures based on IV-VI semiconductors like PbTe, are attractive candidates for room temperature operating detectors and light sources. In the last few years, high crystal and optical quality PbTe/CdTe structures containing single PbTe quantum well [1,2] or single layer of isotropic PbTe quantum dots [3,4] were successfully grown by molecular beam epitaxy (MBE) on GaAs substrates. Because of large difference between GaAs and PbTe lattice parameters (≈ 13%), complicated buffer layer (CdTe/MnTe strained-layer superlattice) was implemented in these structures.…”

Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy

“…For both samples, each peak energy falls between the band gaps of PbTe and CdTe, and their temperature dependencies are positive. The positive dependence is consistent not with that of CdTe but with that of PbTe band gaps [10]. These results suggest that the observed mid-infrared emissions are due to the electronhole pair recombination in PbTe potential wells.…”

The coherent {100} and {110} interfaces between rocksalt-PbTe and zincblende-CdTe

“…Therefore, it can be Te or Cd terminated. Roughness measurements with atomic force microscopy showed that Cd termination before PbTe growth leads to smoother surfaces of the PbTe SQW [13]. Finally, the heterostructure was capped by 50 nm of CdTe.…”