PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

Talapin, Dmitri V.; Murray, Christopher B.

doi:10.1126/science.1116703

Cited by 1,577 publications

(1,889 citation statements)

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“…All elements were quantified based on a Si standard. Estimated detection limits were (in atoms/cm 3 ) 1 × 10 14 for Na and Ti, 1 × 10 15 for Ca, 3 × 10 15 for P, 1 × 10 16 for Zn and Fe, 4 × 10 16 for S, and 5 × 10 17 for C. Atomic concentrations are accurate to within a factor of 5. The depth scale was quantified by measuring the analysis craters with a stylus profilometer and confirmed by SEM imaging of the sectioned films.…”

mentioning

confidence: 87%

PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm² V^–1 s^–1

Liu¹,

Tolentino²,

Gibbs³

et al. 2013

Nano Lett.

226

324

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PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm 2 V −1 s −1 are made by infilling sulfide-capped QD films with amorphous alumina using lowtemperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs. KEYWORDS: Quantum dots, nanocrystals, lead selenide, field-effect transistors, solar cells T he recent introduction of metal chalcogenide complexes (MCCs) as ligands for colloidal quantum dots (QDs) 1 has triggered a flurry of research into inorganic ligands for fabricating high-performance all-inorganic QD solids for optoelectronic applications. 2−4 In addition to several demonstrations of MCC efficacy by Talapin and co-workers, 5−8 a variety of metal-free inorganic ions including chalcogenides, 9,10 halides, 11 thiocyanate, 12−14 and trialkyl oxonium 15 have been shown in initial studies to provide generally better performance in CdX and PbX (X = S, Se, Te) QD field-effect transistors (FETs) 6,7,12−14 and solar cells 11 than the small molecules, such as hydrazine 16 and 1,2-ethanedithiol (EDT), 17,18 traditionally used to replace the long-chain insulating organic ligands inherited from QD synthesis. Ionic inorganic ligands offer several key advantages over neutral molecular ligands. First, many inorganic ligands are ultrasmall and enable strong electronic coupling between QDs in films, which favors highmobility transport. Second, inorganic ions can quantitatively replace native long-chain ligands on the QD surface to produce charge-stabilized colloidal QD suspensions in polar media, in principle allowing the direct formation of conductive QD films from solution without the need for postassembly chemical or thermal treatments that can inhibit charge transport by increasing spatial and energetic disorder in the films. In practice, however, thermal treatments (150−300°C) are typically needed to achieve good transport in all-inorganic QD solids. Also, solution-phase exchange has so far failed to yield stable all-inorganic PbX QD colloids except with select hydrazine-free MCCs or mixed chalcogenide ions, 5,13 so postassembly ("solid state") ligand exchange has been employed instead to make PbX QD devices. 10−13,15 A third advantage of inorganic ligands is that they decompose, evaporate, or assimilate into the QDs at relatively low temperatures to create functional inorganic matrices (e.g., with MCCs) or direct QD−QD contact and partial QD necking/fusion (e.g., with S 2− and SCN − ). Despite the large site energy disorder induced by such annealing, 7,14,19 the electronic properties of films made with this approach may be adequate for many applications, including high-efficiency solar energy conversion. Recent reports of record mobilities for electrons in CdSe, 7,14 holes in PbX, 12,1...

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mentioning

confidence: 87%

PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm² V^–1 s^–1

Liu¹,

Tolentino²,

Gibbs³

et al. 2013

Nano Lett.

226

324

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“…The general strategy to improve the transport is to exchange the ligands with shorter and often conjugated ligands 147, 148. The right spacing between adjacent NCs is needed to obtain a delicate balance between the charge injection and undesired exciton dissociation.…”

Section: Electroluminescent Displays With Colloidal Scncsmentioning

confidence: 99%

Colloidal Quantum Nanostructures: Emerging Materials for Display Applications

2018

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Colloidal semiconductor nanocrystals (SCNCs) or, more broadly, colloidal quantum nanostructures constitute outstanding model systems for investigating size and dimensionality effects. Their nanoscale dimensions lead to quantum confinement effects that enable tuning of their optical and electronic properties. Thus, emission color control with narrow photoluminescence spectra, wide absorbance spectra, and outstanding photostability, combined with their chemical processability through control of their surface chemistry leads to the emergence of SCNCs as outstanding materials for present and next‐generation displays. In this Review, we present the fundamental chemical and physical properties of SCNCs, followed by a description of the advantages of different colloidal quantum nanostructures for display applications. The open challenges with respect to their optical activity are addressed. Both photoluminescent and electroluminescent display scenarios utilizing SCNCs are described.

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“…Short molecular ligands such as thioglycolic acid, sodium citrate183 and hydrazine molecules184 often lead to superlattices with small interparticle distance, hence, enable strong interparticle coupling interactions. For example, the charge transport properties in a nanoparticle superlattice are highly dependent on interparticle spacing 185.…”

Section: Ligand Length On Superlattice Propertiesmentioning

confidence: 99%

Nanoparticle Superlattices: The Roles of Soft Ligands

et al. 2017

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Nanoparticle superlattices are periodic arrays of nanoscale inorganic building blocks including metal nanoparticles, quantum dots and magnetic nanoparticles. Such assemblies can exhibit exciting new collective properties different from those of individual nanoparticle or corresponding bulk materials. However, fabrication of nanoparticle superlattices is nontrivial because nanoparticles are notoriously difficult to manipulate due to complex nanoscale forces among them. An effective way to manipulate these nanoscale forces is to use soft ligands, which can prevent nanoparticles from disordered aggregation, fine‐tune the interparticle potential as well as program lattice structures and interparticle distances – the two key parameters governing superlattice properties. This article aims to review the up‐to‐date advances of superlattices from the viewpoint of soft ligands. We first describe the theories and design principles of soft‐ligand‐based approach and then thoroughly cover experimental techniques developed from soft ligands such as molecules, polymer and DNA. Finally, we discuss the remaining challenges and future perspectives in nanoparticle superlattices.

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PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

Cited by 1,577 publications

References 21 publications

PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm² V^–1 s^–1

PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm² V^–1 s^–1

Colloidal Quantum Nanostructures: Emerging Materials for Display Applications

Nanoparticle Superlattices: The Roles of Soft Ligands

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PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

Cited by 1,577 publications

References 21 publications

PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm2 V–1 s–1

PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm2 V–1 s–1

Colloidal Quantum Nanostructures: Emerging Materials for Display Applications

Nanoparticle Superlattices: The Roles of Soft Ligands

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Product

Resources

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PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm² V^–1 s^–1

PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm² V^–1 s^–1